Název:
Germanium and tin nanoparticles encapsulated in amorphous silicon matrix for optoelectronic application
Autoři:
Stuchlíková, The-Ha ; Remeš, Zdeněk ; Stuchlík, Jiří Typ dokumentu: Příspěvky z konference Konference/Akce: NANOCON 2018 -International Conference on Nanomaterials - Research and Application /10./, Brno (CZ), 20181017
Rok:
2019
Jazyk:
eng
Abstrakt: The plasma enhanced chemical vapour deposition was combined with in situ deposition of Ge and Sn thin film by evaporation technique at surface temperature about 220 °C to form nanoparticles on the surface of hydrogenated silicon thin films to prepare diodes. Formation of nanoparticles was additionally stimulated by plasma treatment through a low pressure hydrogen glow discharge. The diodes based on PIN diode structures with and without the embedded Ge or Sn nanoparticles were characterized by temperature dependence of electrical conductivity, activation energy of conductivity, measurement of volt-ampere characteristics in dark and under solar illumination\n
Klíčová slova:
a-Si:H; diode structures; Ge NPs; I-V characteristics; Sn NPs Číslo projektu: CZ.02.1.01/0.0/0.0/16_019/0000760, EF16_019/0000760, LTC17029, GC16-10429J (CEP) Poskytovatel projektu: OP VVV - SOLID21, GA MŠk, GA MŠk, GA ČR Zdrojový dokument: NANOCON 2018 : Conference Proceedings of the International Conference on Nanomaterials - Research & Application /10./, ISBN 978-80-87294-89-5
Instituce: Fyzikální ústav AV ČR
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Informace o dostupnosti dokumentu:
Dokument je dostupný v příslušném ústavu Akademie věd ČR. Původní záznam: http://hdl.handle.net/11104/0307160