Original title: Characterization of lasers with ë-InAs layers in GaAs
Authors: Hazdra, P. ; Voves, J. ; Oswald, Jiří ; Hulicius, Eduard ; Pangrác, Jiří ; Melichar, Karel ; Šimeček, Tomislav ; Petříček, Otto ; Kuldová, Karla
Document type: Papers
Conference/Event: Annual university-wide seminar WORKSHOP 2002 /10./, Praha (CZ), 2002-02-11 / 2002-02-13
Year: 2002
Language: eng
Abstract: The dependence of the electroluminescence spectra on the number of ë-InAs layers and on the distance of these ë-InAs layers was studied under pulse excitation in the wide range of current densities.
Keywords: electroluminescence; GaAs; InAs; isovalent ë layers; semiconductor lasers
Project no.: CEZ:AV0Z1010914 (CEP), CEZ:MSM 212300014, GA102/99/0414 (CEP)
Funding provider: GA ČR
Host item entry: Proceedings of Tenth Annual university-wide seminar WORKSHOP 2002

Institution: Institute of Physics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0031822

Permalink: http://www.nusl.cz/ntk/nusl-21869


The record appears in these collections:
Research > Institutes ASCR > Institute of Physics
Conference materials > Papers