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Charge Carrier Transport in Ta2O5 Oxide Nanolayers with Application to the Tantalum Capacitors
Kopecký, Martin ; Koktavý, Bohumil (referee) ; Hudec, Lubomír (referee) ; Sedláková, Vlasta (advisor)
Studium transportu náboje v Ta2O5 oxidových nanovrstvách se zaměřuje především na objasnění vlivu defektů na vodivost těchto vrstev. Soustředíme se na studium oxidových nanovrstev Ta2O5 vytvořených pomocí anodické oxidace. Proces výroby Ta2O5 zahrnuje řadu parametrů, jež ovlivňují koncentraci defektů (oxidových vakancí) v této struktuře. Vrstva oxidu Ta2O5 o tloušťce 20 až 200 nm se často používá jako dielektrikum pro tantalové kondenzátory, které se staly nedílnou součástí elektrotechnického průmyslu. Kondenzátory s Ta2O5 dielektrickou vrstvou lze modelovat jako strukturu MIS (kov – izolant – polovodič). Anodu tvoří tantal s kovovou vodivostí, katodu potom MnO2 či vodivý polymer (CP), které jsou polovodiče. Hodnoty elektronových afinit, respektive výstupních prací, jednotlivých materiálů potom určují výšku potenciálových bariér vytvořených na rozhraních kov-izolant (M – I) a izolant-polovodič (I – S). Dominantní mechanizmy transportu náboje lze určit analýzou I-V charakteristiky zbytkového proudu. Dominantní mechanizmy transportu náboje izolační vrstvou jsou ohmický, Poole-Frenkelův, Shottkyho a tunelování. Uplatnění jednotlivých vodivostních mechanismů je závislé na teplotě a intenzitě elektrického pole v izolantu. Hodnota zbytkového proud je významným indikátorem kvality daného izolantu. Ten závisí na technologii výroby kondenzátoru, významně především na parametrech anodické oxidace a na materiálu katody. I-V charakteristiky zbytkového proudu se měří v normálním a reversním módu, tj. normální mód značí kladné napětí na anodě a reversní mód záporné napětí na anodě. I-V charakteristika je výrazně nesymetrická, a proto tyto kondenzátory musí být vhodně polarizovány. Nesymetrie I-V charakteristiky se snižuje s klesající teplotou, při teplotě pod 50 K a je možno některé kondenzátory používat jako bipolární součástky. Z analýzy I-V charakteristiky lze určit řadu parametrů, jako tloušťku izolační vrstvy a koncentraci defektů v izolační Ta2O5 vrstvě a dále lze odhadnout parametry MIS modelu kondenzátoru - stanovit hodnotu potenciálových bariér na rozhraních M – I a I – S. Měření C-V charakteristik při různých teplotách v rozsahu 10 až 300 K je využíto pro určení výšky potenciálové bariéry na rozhraní I – S, závislosti kapacity na teplotě a dále pro výpočet efektivní plochy elektrod. Z výbrusu vzorků na skenovacím elektronovém mikroskopu byly určeny tloušťky dielektrika Ta2O5 pro jednotlivé vyhodnocované řady kondenzátorů.
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Photogeneration of Charge Carriers in Organic Semiconductors
Heinrichová, Patricie ; Kratochvílová, Irena (referee) ; Cimrová,, Věra (referee) ; Weiter, Martin (advisor)
The interest in the detail knowledge about elementary electronic processes during photogeneration of charge carriers, which allow achieving higher efficiency of organic solar cells, grows with advent of the commercial organic solar cells production. The thesis is focused on study of photogeneration of charge carriers in organic semiconductors, especially in -conjugated polymer materials. First part of the thesis summarized state of the art in studies of photogeneration of charge carriers in polymer solar cells. Subsequent experimental and results part are focused on study of polymeric solar cells prepared from electron donor polymers MDMO-PPV, Tg-PPV, PCDTBT and PCBTDPP and electron acceptor derivates of fullerenes PC60BM and PC70BM. Results of the thesis are divided in tree main parts: 1) study of charge transfer between electron donor and electron acceptor materials by optical methods, 2) study of charge transfer between electron donor and electron acceptor materials by optoelectrical methods and 3) development of organic solar cells on flexible substrates. The last part is focused largely on deposition methods of active materials thin layer.
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X-ray investigation of defects in graded SiGe/Si thin layers
Endres, Jan ; Daniš, Stanislav (advisor) ; Holý, Václav (referee)
The goal of presented work is a study of defects in graded Si1xGex/Si thin layers. Misfit dislocations are dominant type of defects in this kind of layers. Diffuse scattering of radiation, which is caused by the presence of defects, was measured with high-resolution diffractometer. Misfit dislocations arrangement in the layers was determined from measured reciprocal space maps. Misfit dislocations distribution is discussed within the scope of two models. Equilibrium one, which is based on energy minimization, and kinetic one, which considers thermally activated movement of dislocations. Measured reciprocal space maps were compared with simulations, which were realized via kinematic theory of X-ray radiation scattering.
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Diagnostics of low-temperature plasma using the Langmuir and emissive probes
Klusoň, Jan ; Kudrna, Pavel (advisor) ; Tichý, Milan (referee)
Magnetron sputtering belongs to the most important methods of production of thin films with a wide range of physical properties. Examples include hard, wear-resistant coatings, low friction ones, corrosion resistant ones as well as coatings with specific electrical or optical properties. During the development the basic sputtering process has been significantly improved and nowadays there are a number of various techniques of magnetron sputtering. Pulsed magnetron sputtering presents one of these techniques. The pulsed regime is especially suitable for the deposition of insulating layers because there occurs no effect of charging up of the target followed by arc events. The fact that pulsed sputtering allows reducing the substrate temperature during the deposition is also important. This thesis deals with the low-temperature plasma in magnetron discharge generated by pulsed DC voltage. The measurement was carried out in the experimental apparatus of the cylindrical magnetron. The plasma diagnostics was performed by means of the electrostatic Langmuir and emissive probe. The dependencies of the basic plasma parameters, i.e. electron density, electron temperature and plasma potential, were evaluated with time and spatial resolution. The dependencies on pressure, length of the voltage pulse and the value of...
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Study of beta phase in Al-Mg-Si alloys by means of unconventional methods of electron microscopy
Ligas, Aleš ; Julišová, Martina (referee) ; Mikmeková, Šárka (advisor)
Aluminium Al-Mg-Si alloys are the most commonly used in automotive and construction industry. Hexagonal ’-phase is one of the metastable phases occured in this type of alloys. Unlike classic square -phase, this ’-phase is characterized by different crystalographic orientation to the matrix and shape. Standard method used for identification of aluminium alloys is scanning electron microscopy (SEM), because of its quickness and efficiency, but in case of very thin or damaged structures (as a result of metallographic process) it’s insufficient. Scanning low energy electron microscopy (SLEEM) can be appropriate for identification of mentioned precipitates due to its physical principles resulting in many advantages compared to SEM. So the most important benefits are interaction volume reduction (which leads to improvement of surface sensitivity), increase of material contrast (ability to change matrix / precipitates contrast) as well as crystalographic contrast.
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Deposition of Ga and GaN ultrathin layers on graphene substrate
Dvořák, Martin ; Nebojsa, Alois (referee) ; Mach, Jindřich (advisor)
This diploma thesis deals with preparation of graphene samples for depositions of ultrathin layers of gallium and gallium nitride. Graphene substrates were prepared by chemical vapour deposition in home-build high temperature reactor. After graphene transfer to silicon wafers, a series of chemical and thermal treatments were performed. Obtained samples were suitable for the study of growth of ultrathin layers of Ga and GaN. The growth of Ga and GaN was realized in ultra high vacuum conditions. Molecular beam epitaxy technique was used for gallium depositions together with ion source for nitridation. Obtained ultrathin layers were studied with X-ray photoelectron spectroscopy, atomic force microscopy and with scanning electron microscopy.
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Geochemical study of processes, relevant to safety assessment of deep geological repository: Uranium forms and enrichment scenario in a sedimentary system at the Ruprechtov natural analogue site
Havlová, Václava ; Jelínek, Emil (advisor) ; Pačes, Tomáš (referee) ; Zeman, Josef (referee)
U migration was studied in order to better understand to processes of safety relevant elements, particularly U. The rock sequence on the site can be analogous to a potential rock overburden of deep geology repositories. A multidisciplinary approach was undertaken in order to identify and characterise U mobilisation/immobilisation processes within sedimentary clayey rocks with organic matter enriched interlayers. Both conventional methods and modern sophisticated spectroscopic methods were combined. Sequential extraction, wet chemical method and even spectroscopic methods proved that U prevailed in the U(IV) form in low-oxidised samples. It moved towards more easily releasable fractions with sample ageing (oxidation). The combination of SE, µ-XRF and µ-XAFS results proved U to be unexpectedly associated with As and P, leading to the presumption that U(VI) from groundwater was reduced to U(IV) on As pyrite. The evaluation of the hydrogeochemical conditions and isotope analyses then brought the results into broader context: Sedimentary organic matter within the sedimentary layers was microbially oxidised, releasing dissolved organic matter and providing H+ in order to dissolve sedimentary inorganic carbonates. SO4 2- could be reduced under reducing groundwater conditions, thus causing FeS2 formation....
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