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	Applications of porous III-V semiconductors in heteroepitaxial growth and in preparation of nanocomposite structures Nohavica, Dušan ; Grym, Jan ; Gladkov, Petar ; Hulicius, Eduard ; Pangrác, Jiří We investigate the concept of epitaxial growth on porous substrates Both crystalographically oriented and current line oriented pore networks in InP and GaAs were created by electrochemical dissolution. Heat treatment of InP pores at 650 ºC and GaAs pores at 700-850ºC converted them into microcavities. The capability of improved structural quality homo- and hetero-epitaxially overgrown films is demonstrated on InAs and GaInAs layers with a different composition grown on porous GaAs substrates Detailed record
	Asymetrie krystalografických pórů v polovodičích A.sup.3./sup. B.sup.5./sup Nohavica, Dušan ; Gladkov, Petar ; Jarchovský, Zdeněk In the contribution the crucial influence of the (011) planes nonequivalence on pores formation in InP and some other A.sup.3./sup. B.sup.5./sup. semiconductors is demonstrated. In plane (01-1) are three different, crystallographically oriented (CO) sets of pores with three different orientations. In the perpendicular plane (011) triangular crossing points are observable. Heat treatment of the InP plates containing pores produce spherical figures which we have used to decrease the dislocation density in epitaxial layers by mechanism of the ELO. Detailed record
	Tvorba mikro a nanoporů v polovodičích A.sup.3./sup. B.sup.5./sup Nohavica, Dušan ; Gladkov, Petar ; Zelinka, Jiří ; Dvořák, Martin ; Pirov, J. Electrochemically etched pores are accessible also in A.sup.3./sup. B.sup.5./sup. semiconductors. In particular, pores in InP, GaAs and GaP have been investigated in our laboratory. More complex experimental data have been collected for InP which is suitable for the preparation almost self organized pores net. Pores multilayer containing current oriented and/or crystallographic pores was prepared and some details of the process are discussed. The GaAs and GaP demonstrate both, current oriented and crystallographic pores as well with specific differences. Detailed record

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