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Chemical deposition of diamond thin films from gas vapors
Kromka, Alexander
The preparation of diamond layers and their (nano-) structures requires the optimization of several technological steps. In the first step of “diamond technology” it is important to activate the surface of the non-diamond substrate by a suitable process known as nucleation or nucleation. The second key step is the growth of the diamond layer itself by chemical vapor deposition (CVD) under low pressures (10 ÷ 10,000 Pa) and temperatures in the range of 250 ÷ 1000 °C, and from a gas mixture of methane and hydrogen commonly used in a hot filament or microwave plasma CVD systems. In this paper, both technological steps, nucleation and growth, are discussed in light of current trends and experimental activities taking place in the laboratories of the Institute of Physics of the Academy of Sciences of the Czech Republic (FZÚ).
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Preparation of 2D materials in an ultrahigh vacuum electron microscope
Dymáček, Michal ; Bartošík, Miroslav (referee) ; Kolíbal, Miroslav (advisor)
This thesis is devoted to preparation of multilayer graphene and h-BN by CVD method. In the theoretical part of this thesis, both materials are introduced, as well as the CVD method and SEM. In the experimental part, the equipment and samples are described, as well as the computer codes, that were made within this work and used for analysis of taken images, and experiments, that were carried out. Utilizing in-situ analysis in ultra-high vacuum scanning electron microscope, the goal was to answer a question how is the multilayer graphene formed on the surface. Also, the first experiments of preparation of h-BN in this aparature were carried out.
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Mechanical and Electrical Properties of Microcrystalline Silicon Thin Films
Vetushka, Aliaksei ; Fejfar, Antonín (advisor) ; Čech, Vladimír (referee) ; Sládek, Petr (referee)
Amorphous and nano- or micro- crystalline silicon thin films are intensively studied materials for photovoltaic applications. The films are used as intrinsic layer (absorber) in p-i-n solar cells. As opposed to crystalline silicon solar cells, the thin films contain about hundred times less silicon and can be deposited at much lower temperatures (typically around 200 0 C) which saves energy needed for production and makes it possible to use various low cost (even flexible) substrates. However, these films have a complex microstructure, which makes it difficult to measure and describe the electronic transport of the photogenerated carriers. Yet, the understanding of the structure and electronic properties of the material at nanoscale is essential on the way to improve the efficiency solar cells. One of the main aims of this work is the study of the structure and mechanical properties of the mixed phase silicon thin films of various thicknesses and structures. The key parameter of microcrystalline silicon is the crystallinity, i.e., the microcrys- talline volume fraction. It determines internal structure of the films which, in turn, decides about many other properties, including charge transport and mechanical sta- bility. Raman microspectroscopy is a fast and non-destructive method for probing the...
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Synthesis of low-crosslinked polymers by plasma polymerization
Kuchtová, Štěpánka ; Bránecký, Martin (referee) ; Čech, Vladimír (advisor)
This bachelor thesis deals with plasma enhanced chemical vapour deposition (PECVD), specifically plasma polymerisation, which has been used for the synthesis of low density crosslinked polymer thin films. Organosilicon thin films were deposited on a silicon substrate by radio frequency (RF) capacitively coupled plasma in a deposition chamber. Spectroscopic ellipsometry was used to determine the layer thickness and its optical properties. The chemical structure of the layers was investigated by Fourier transform infrared spectroscopy and the mechanical properties were investigated by nanoindentation. The effect of power and self-bias (USB) on the chemical structure, mechanical and optical properties of the as-prepared layers, which are related to the crosslinking density, was investigated in the context of achieving low crosslinking density of the material. Low crosslinked plasma polymers were synthesized at a self-bias level of 1 V, which corresponds to an approximate RF power of 0,1 W. This material can be characterized by a density of 1, 2 g·cm-3 an elastic modulus of 4 GPa, a hardness of 0,04 GPa and a refractive index of 1.53 at 633 nm (He-Ne laser wavelength). Infrared spectroscopy confirmed that this plasma polymer is composed of a carbon network with fewer embedded silicon atoms and, in particular, the highest concentration of vinyl groups compared to plasma polymers prepared at higher powers.
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Influence of electron beam on graphene field effect transistors
Mareček, David ; Čech,, Vladimír (referee) ; Čechal, Jan (advisor)
This diploma thesis deals with electrical conductivity of a graphene sample, preparation of a graphene field-effect transistor and his irradiation by electron beam. In the theoretical part of the thesis, we describe electronic properties of graphene, preparation of graphene by CVD and its transfer to Si substrate with SiO_2 layer. Experimental part of this thesis is focused on the preparation of a graphene field-effect transistor for use in UHV conditions. Futher describes electron beam scanning over the transistor and creation of current maps of tranzistor. In the last part, the thesis deals with influence of electron beam on transport properties of graphene layer and doping of graphene layer by electron beam.
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Mechanical and Electrical Properties of Microcrystalline Silicon Thin Films
Vetushka, Aliaksei ; Fejfar, Antonín (advisor) ; Čech, Vladimír (referee) ; Sládek, Petr (referee)
Amorphous and nano- or micro- crystalline silicon thin films are intensively studied materials for photovoltaic applications. The films are used as intrinsic layer (absorber) in p-i-n solar cells. As opposed to crystalline silicon solar cells, the thin films contain about hundred times less silicon and can be deposited at much lower temperatures (typically around 200 0 C) which saves energy needed for production and makes it possible to use various low cost (even flexible) substrates. However, these films have a complex microstructure, which makes it difficult to measure and describe the electronic transport of the photogenerated carriers. Yet, the understanding of the structure and electronic properties of the material at nanoscale is essential on the way to improve the efficiency solar cells. One of the main aims of this work is the study of the structure and mechanical properties of the mixed phase silicon thin films of various thicknesses and structures. The key parameter of microcrystalline silicon is the crystallinity, i.e., the microcrys- talline volume fraction. It determines internal structure of the films which, in turn, decides about many other properties, including charge transport and mechanical sta- bility. Raman microspectroscopy is a fast and non-destructive method for probing the...
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EXPERIMENTAL STUDY OF PIB-BASED CVD GRAPHENE TRANSFER EFFICIENCY
Bouša, Milan ; Kalbáč, Martin ; Jirka, Ivan ; Kavan, Ladislav ; Frank, Otakar
The transfer of graphene prepared by Chemical Vapor Deposition (CVD) from metal catalyst to target substrate is an important step in preparing desirable nanoscale structures in various fields of science, and thus searching for fast, cheap and clean method attracts great interest. Investigation of mechanical properties of graphene, which are crucial for applications in flexible electronics, performed on bendable synthetic materials, requires a transfer technique using polymers soluble in aliphatic solvents harmless for target polymer substrates. In this study we explore a dry technique using polydimethylsiloxane (PDMS) as stamping polymer and polyisobutylene (PIB) layer as graphene-support polymer. After the transfer PDMS is peeled off and PIB is dissolved in hexane, hence this method fulfils the above mentioned prerequisite. The effectiveness of this transfer was examined by scanning electron microscopy, optical microscopy and Raman microspectroscopy including micro-mapping, and finally by X-ray photoelectron spectroscopy. With all methods carried out, it was found that this sort of stamp-technique is suitable for a high precision transfer of small grains of CVD graphene onto polymer substrates with large yields and similar purity compared to poly(methylmethacrylate) (PMMA)based transfer methods. However, it introduces substantial quantity of surface discontinuities, and therefore this is not a proper method for large scale applications.
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Thin Films of Polycrystalline Silicon
Lysáček, David ; Schmidt, Eduard (referee) ; Fejfar, Antonín (referee) ; Spousta, Jiří (advisor)
The doctoral thesis deals with the structure and properties of the polycrystalline silicon layers deposited on the silicon wafers backside. The wafers are further used for production of semiconductor devices. This work is focused on detailed description of the layers structure and study of the gettering properties and residual stress of the layers. The main goal of this work is to develop two novel technologies. The first one leads to improvement of the temperature stability of the gettering properties of the layers, and the second one solves the deposition of the layers with pre-determined residual stress. This doctoral thesis was created with the support of the company ON Semiconductor Czech Republic, Rožnov pod Radhoštěm.
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