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Studium fyzikálních vlastností magnetických oxidů spektroskopickými metodami
Zahradník, Martin ; Veis, Martin (advisor)
Two groups of magnetic oxides were investigated in this thesis. Thin films of La2/3Sr1/3MnO3 (LSMO) deposited by pulsed laser deposition (PLD) on SrTiO3 (STO) substrates were characterized by polar and longitudinal magneto-optical (MO) Kerr spectroscopy. Experimental results were compared to theoretical calculations based on the transfer matrix formalism. A very good agreement between experimental and theoretical data revealed high magnetic ordering down to 5 nm of film thickness as well as a mechanism of suppression of double exchange interaction near the LSMO/STO interface. Magnetically doped Ce1-xCoxO2-δ films deposited by PLD on MgO (x = 0.05 and 0.10) and oxidized Si (x = 0.20) substrates were studied by combination of spectroscopic ellipsometry and MO Faraday and Kerr spectroscopy. Both diagonal and off-diagonal permittivity tensor components were obtained and verified by theoretical calculations confronted with experimental data. Diagonal spectra revealed two optical transitions from oxygen to cerium states. Off-diagonal spectra revealed two paramagnetic transitions involving cobalt ions. An essential influence of cobalt doping on the resulting ferromagnetic properties of CeO2 was observed.
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Studium fyzikálních vlastostí magnetických oxidů spektroskopickými metodami
Zahradník, Martin ; Veis, Martin (advisor) ; Kouřil, Karel (referee)
Two groups of magnetic oxides were investigated in this thesis. Thin films of La2/3Sr1/3MnO3 (LSMO) deposited by pulsed laser deposition (PLD) on SrTiO3 (STO) substrates were characterized by polar and longitudinal magneto-optical (MO) Kerr spectroscopy. Experimental results were compared to theoretical calculations based on the transfer matrix formalism. A very good agreement between experimental and theoretical data revealed high magnetic ordering down to 5 nm of film thickness as well as a mechanism of suppression of double exchange interaction near the LSMO/STO interface. Magnetically doped Ce1-xCoxO2-δ films deposited by PLD on MgO (x = 0.05 and 0.10) and oxidized Si (x = 0.20) substrates were studied by combination of spectroscopic ellipsometry and MO Faraday and Kerr spectroscopy. Both diagonal and off-diagonal permittivity tensor components were obtained and verified by theoretical calculations confronted with experimental data. Diagonal spectra revealed two optical transitions from oxygen to cerium states. Off-diagonal spectra revealed two paramagnetic transitions involving cobalt ions. An essential influence of cobalt doping on the resulting ferromagnetic properties of CeO2 was observed.
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Magnetooptical spectroscopy of La2/3Sr1/3MnO3 ultrathin films
Zahradník, Martin ; Veis, Martin (advisor) ; Postava, Kamil (referee)
High quality La2/3Sr1/3MnO3 (LSMO) ultrathin layers are of interest for applications in magnetic sensors and spintronic devices due to colossal magnetoresistance of these materials. LSMO films studied in this thesis were grown by pulsed laser deposition on SrTiO3 substrates. The deposition at low oxygen pressures with the use of a beam homogenizer leads to the high quality LSMO films. The film thickness ranges from 5,0 to 103,9 nm. Magnetooptical (MO) spectrometer based on azimuth modulation was used and spectra of MO Kerr effect in polar and longitudinal configuration were obtained. All the spectra display features typical for LSMO films, including the thinnest 5 nm thick film. MO Kerr effect observed in this film reflects high magnetic ordering even at such low thickness. All the spectra manifest high quality of the LSMO films prepared with the use of the beam homogenizer.
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Aplication of SPM in study and modification of ultrathin films Pt, Co and graphene
Lišková, Zuzana ; Červenka,, Jiří (referee) ; Bartošík, Miroslav (advisor)
This diploma thesis deals with the preparation of the very thin films and their investigation by scanning probe microscopy methods. The ultrathin films of Pt on Pt(111) were created by pulsed laser deposition and the ultrathin films of Co on Pt(111) were deposited by thermal evaporation. The coverage of the substrate was much smaller than one monolayer (in order of hundredths of monolayer). The nucleation theory was verified by these experiments using so-called Onset method. Further graphene sheets were prepared on layer of Si/SiO2 by the mechanical exfoliation from the graphite crystal. The fabricated graphene sheets were studied by micro-Raman spectroscopy, microreflectometry, atomic force microscopy and similar techniques. These methods proved the thinnest graphite layers were consisted of two graphene monolayers.
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Preparation of Thin Layers of Ferromagnetic Semiconductors
Koštejn, Martin
The paper reports on the experiments of preparation Mn diluted in Silicon. These materials are potential ferromagnetic semiconductors. Thin layer have been prepared by reactive pulsed laser deposition of Mn target under small pressure of volatile precursor (silane or germane). We estimate initial temperature 1 mn above surface as 1.9 eV. The prepared layers can contain 1-40% of Mn atoms in form of amorphous mixture of Mn and Si or nano-crystallized mixture of Mn and Ge. High temperature annealing or rapid laser annealing is needed for recrystallization of Mn:Si layers.
Fulltext: content.csg -  PDF
Plný tet: SKMBT_C22015011914541 - PDF
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Preparation of Thin Layers of Ferromagnetic Semiconductors
Koštejn, Martin
The paper reports on the experiments of preparation Mn diluted in Silicon. Si:Mn can be a material with the potential of room temperature ferromagnetism. Si:Mn have been prepared by pulsed laser deposition of Mn target under 20 Pa of silane by ArF laser. We estimate initial temperature 1 mm above surface as 1.9 eV. The prepared supersaturated layers contain 11% of manganese atoms, and they are formed by small particles. Diffraction images show no crystallization of Mn or Si, but there are signs of formation of silicides. The prepared material is amorphous or it contains only nanosized crystals below our limit of detection. Electron paramagnetic spectra show unbounded electrons which are needed for ferromagnetic properties. By annealing to 1100 ̊C changes in the crystallization and start of silicon and manganese separation were observed.
Fulltext: content.csg - PDF
Plný tet: SKMBT_C22015011914540 - PDF
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