Original title: Preparation of Thin Layers of Ferromagnetic Semiconductors
Authors: Koštejn, Martin
Document type: Proceedings
Conference/Event: studentská vědecká konference fyziky pevných látek /3./, Dvorská bouda (CZ), 2013-06-28 / 213-07-02
Year: 2013
Language: eng
Abstract: The paper reports on the experiments of preparation Mn diluted in Silicon. These materials are potential ferromagnetic semiconductors. Thin layer have been prepared by reactive pulsed laser deposition of Mn target under small pressure of volatile precursor (silane or germane). We estimate initial temperature 1 mn above surface as 1.9 eV. The prepared layers can contain 1-40% of Mn atoms in form of amorphous mixture of Mn and Si or nano-crystallized mixture of Mn and Ge. High temperature annealing or rapid laser annealing is needed for recrystallization of Mn:Si layers.
Keywords: diluted magnetic semiconductors; pulsed laser deposition; room temperature ferromagnetism
Rights: This work is protected under the Copyright Act No. 121/2000 Coll.

Institution: Institute of Chemical Process Fundamentals AS ČR (web)
Original record: http://hdl.handle.net/11104/0242877

Permalink: http://www.nusl.cz/ntk/nusl-180539


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Research > Institutes ASCR > Institute of Chemical Process Fundamentals
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