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Zobrazení dopantu v polovodiči s pomocí sekundárních elektronů v LESEM
Mika, Filip ; Frank, Luděk
One of the crucial parameters in characterization of semiconductor devices is the dopant distribution profile. Details in both lateral and in-depth distributions of dopants fall at least in the same order of magnitude. Consequently, the device characterization becomes a non-trivial task. Two-dimensional dopant profiling in this study was made in the cathode lens equipped low energy scanning electron microscope.
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Quantification of the dopant in semiconductor in SEM
Mika, Filip ; Frank, Luděk
The dopant contrast in SEM has now been studied for more than a decade, a clear explanation of it remains a matter for the future. The angular dependence of the contrast has also not been fully clarified. Generally, p-type silicon appears brighter in the secondary electron (SE) emission than n-type. This study aims to examine the contrast behaviour with the emission angle.
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Scanning electron microscopy with low energy electrons
Mika, Filip
A method of scanning electron microscopy (SEM) of nonconductive specimens, based on measurement and utilisation of the critical energy of electron impact, is described in detail together with examples of its application. The critical energy, at which the total electron yield curve crosses the unit level, is estimated on the base of measurement of the time development in the image signal from beginning of irradiation. The method is programmed and implemented as a module to the controlling software of the micropscope type VEGA, where it secures fast search for the critical energy value.
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Scanning electron microscopy with low energy electrons
Mika, Filip
A method of scanning electron microscopy (SEM) of nonconductive specimens, based on measurement and utilisation of the critical energy of electron impact, is described in detail together with examples of its applications. The critical energy, at which the total electron yield curve crosses the unit level, is estimated on the base of measurement of the time development in the image signal from beginning of irradiation. The method is programmed and implemented as a module to the controlling software of the microscope type VEGA, where it secures fast search for the critical energy value.
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Tvorba kontrastu při zobrazení dopovaného polovodiče v nízkoenergiovém REM
Mika, Filip ; Frank, Luděk
Functional details of semiconductor structures keep decreasing in size. Among the structure elements the locally doped patterns play crucial role so that tools are needed for their observation. For fast diagnosis and quality check of the semiconductor structures the scanning electron microscope is useful because of its wide range of magnification, availability of different signal modes, speed of data acquisition and nondestructive nature of the technique in general, especially at low voltage operations. The dopant concentration in semiconductor is quantitatively determined via acquisition of signal of the secondary electron (SE) emission in such a way that the image contrast is measured between areas of different type or rate of doping
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