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	EPITAXIAL OVERGROWTH OF InP and GaAs MICROPORES, MICROCAVITIES AND MICROLAMELLAS BY InAs AND InGaAs Nohavica, Dušan ; Grym, Jan ; Hulicius, Eduard ; Pangrác, Jiří ; Gladkov, Petar ; Jarchovský, Zdeněk Structural and optical properties of micro and nano-porous InP and GaAs substrates used for an epitaxial overgrowth of thin films were investigated. Both crystalographically oriented (CO) and current line oriented (CLO) pore networks were created by electrochemical dissolution. Heat treatment of InP pores at 650oC and GaAs pores at 750-850oC converted them into microcavities The capability of improved structural quality homo- and hetero-epitaxially overgrown films on the porous InP, was also demonstrated by LPE growth of InP and InAs and GaInAs on GaAs by MOVPE technology. Detailed record
	STUDY OF ELECTROPHORETIC DEPOSITION OF Pd METAL NANOPARTICLES ON InP AND GaN CRYSTAL SEMICONDUCTORS FOR H2 GAS SENSORS Žďánský, Karel ; Yatskiv, Roman ; Grym, Jan ; Černohorský, O. ; Zavadil, Jiří ; Kostka, František Deposition of Pd nanoparticles (NPs) on InP or GaN single crystal wafer was performed from isooctane colloid solution. Diodes were prepared by making Schottky contact with colloidal graphite on Pd NPs partly coated surface and ohmic contact on the blank side of the wafer. It was found that several ppb of hydrogen in nitrogen gas can be detected by monitoring the change of diode current at a constant bias voltage. Diodes made on GaN were about ten times more sensitive to hydrogen than those made on InP. Detailed record
	Microscopy of nanoparticles and films with nanoparticles Kacerovský, Pavel ; Žďánský, Karel ; Procházková, Olga ; Vaniš, Jan ; Grym, Jan ; Vasiliev, A. ; Pašajev, E. M. To study the electrophoreticaly deposited nanolayers of reverse micelles with Pd nano-particles on n-type InP substrates a wide range of current microscopic methods has been used. What concerns analytical methods the X-ray diffraction and mass spectrometry SIMS were used. The most relevant results about Pd nanoparticles in the layer were obtained by using HRTEM microscopy and SIMS spectrometry. In nanolayers crystallographic arrangement of Pd nanoparticles has not been found. Detailed record
	GROWTH OF InP CRYSTALS WITH RARE-EARTH ELEMENTS Yatskiv, Roman ; Grym, Jan ; Žďánský, Karel ; Pekárek, Ladislav ; Zavadil, Jiří We report on the influence of rare earth (RE) elements (Pr, Er, and Dy) addition during vertical Bridgman low pressure synthesis on the properties of InP crystals. The temperature dependent Hall measurement and low temperature photoluminescence (PL) spectroscopy were employed to study the changes in electrical and optical properties of the crystals. The observed changes are attributed to the gettering effect of REs caused by the high affinity of REs towards shallow impurities in InP. Detailed record
	LPE Growth of III-V Semiconductors from rare-earth Treated Melts Grym, Jan ; Procházková, Olga ; Zavadil, Jiří ; Žďánský, Karel We focus on the characterization of InP and InGaAsP layers prepared by liquid phase epitaxy with rare-earth admixtures. We applied photoluminescence spectroscopy (PL), capacitance-voltage measurements, and secondary ion mass spectroscopy in order to explain: (i) the gettering effect and conductivity crossover of InP layers for Pr treated samples, (ii) narrowing of the PL and elecroluminescent spectra of the active InGaAsP region of a double-heterostructure LED. Detailed record
	Růst InP metodou LPE s přídavkem prvků vzácných zemin do taveniny Grym, Jan ; Procházková, Olga ; Zavadil, Jiří ; Žďánský, Karel Addition of REs to the growth melt is known to have purifying effect on AIIIBV LPE layers. Each member of REs family acts in its own way. Small addition of Tb, Dy, Tm, and Pr leads to pronounced gettering of shallow donors, the high purity n-type InP can be grown. Exceeding certain concentration, reversal of conductivity type from n to p occurs. Addition of Tm during growth on InP:Fe substrates always results in the preparation of semi-insulating layers due to Fe out-diffusion mediated by RE admixture. Detailed record
	Physical properties of InP epitaxial layers prepared with dysprosium admixture Grym, Jan ; Procházková, Olga Physical properties of commonly prepared InP layers grown by LPE technique and those grown from Dy treated melt are compared. The layers were examined by SEM, low temperature PL spectroscopy, C-V measurements and temperature dependent Hall effect. Structural, electrical and optical properties of InP layers exhibit a significant dependence on the presence of Dy and its concentration in the melt. When increasing the concentration of Dy the reversal of electrical conductivity occurs. Detailed record
	Influence of rare-earth elements on InP-based semiconductor structures for radiation detectors Grym, Jan ; Procházková, Olga Preparation and characterization of InP epitaxial layers with Tb admixture in the growth melt is reported. Structural, electrical and optical properties of InP layers exhibit a signaficant dependence on the presence of Tb and its concentration in the melt. When increasing the concentration of Tb in the growth melt the reversal of electrical conductivity occurs. Detailed record
	Characterisation of InP layers prepared by the LPE method with Pr and Nd addition in the growth melt Grym, Jan ; Procházková, Olga ; Zavadil, Jiří ; Žďánský, Karel High purity InP epitaxial layers were grown by LPE from the melt conataining, besides essential components, also rare-earth elements admixture. The layers were examined by SEM, low temperature PL spectroscopy, C-V measurements and temperature dependent Hall effect. The behaviour and the impact of Pr and Nd were compared. The concentration of shallow impurities was reduced by up to three orders of magnitude. PL spectra were markedly narrowed and fine spectral features were resolved. Detailed record
	Příprava a charakterizace struktur ZnO malých rozměrů Grym, Jan ; Fernández, P. ; Piqueras, J. ZnO low dimensional structures were prepared in order to study their unique electronic and optical properties. ZnO nanocrystals were obtained by ball milling of commercially available powders. This process was found to produce particles with sizes of tens to hundreds nanometers being composed of nanocrystals down to a few nanometers. ZnO micro and nanorods mainly of hexagonal shape as well as nanotubes and nanocombs were grown by vapor-solid method in a muffle furnace under the flow of high purity argon. Detailed record

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3	Grym, Jakub

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