Original title: STUDY OF ELECTROPHORETIC DEPOSITION OF Pd METAL NANOPARTICLES ON InP AND GaN CRYSTAL SEMICONDUCTORS FOR H2 GAS SENSORS
Authors: Žďánský, Karel ; Yatskiv, Roman ; Grym, Jan ; Černohorský, O. ; Zavadil, Jiří ; Kostka, František
Document type: Papers
Conference/Event: NANOCON 2010. International Conference /2./, Olomouc (CZ), 2010-10-12 / 2010-10-14
Year: 2010
Language: eng
Abstract: Deposition of Pd nanoparticles (NPs) on InP or GaN single crystal wafer was performed from isooctane colloid solution. Diodes were prepared by making Schottky contact with colloidal graphite on Pd NPs partly coated surface and ohmic contact on the blank side of the wafer. It was found that several ppb of hydrogen in nitrogen gas can be detected by monitoring the change of diode current at a constant bias voltage. Diodes made on GaN were about ten times more sensitive to hydrogen than those made on InP.
Keywords: nanostructures; semiconductor devices; sensors
Project no.: CEZ:AV0Z20670512 (CEP)
Host item entry: CONFERENCE PROCEEDINGS NANOCON 2010, ISBN 978-80-87294-19-2

Institution: Institute of Photonics and Electronics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0194678

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