National Repository of Grey Literature 4 records found  Search took 0.01 seconds. 
Strmé InAs/GaAs heteropřechody a velmi tenké kvantové jámy vypěstované pomocí MOVPE
Hulicius, Eduard ; Pacherová, Oliva ; Oswald, Jiří ; Hospodková, Alice ; Pangrác, Jiří ; Šimeček, Tomislav ; Melichar, Karel ; Petříček, Otto ; Chráska, T. ; Holý, V. ; Vávra, I. ; Ouattara, L.
We have found that the abruptness and symmetry on monoatomic scale is achievable with MOVPE technique as well. We are able to find only the periodicity in these structures while atomic resolution pictures give reliable thickness values.
Measurement of electro-optical properties of quantum-size structures based on InAs/GaAs - photocurrent and electroluminescence
Mačkal, Adam ; Hazdra, P. ; Hulicius, Eduard ; Oswald, Jiří ; Pangrác, Jiří ; Melichar, Karel ; Hospodková, Alice ; Šimeček, Tomislav
Contribution presents the electroluminescence, photoabsorption and polarization properties of semiconductor lasers with thin strained InAs layers in GaAs at elevated temperatures. The lasers exhibit high optical recombination efficiency, low threshold current density and wide temperature operation range (above 100řC).
Lasery s napjatými tenkými InAs vrstvami v GaAs - elektroluminiscence a fotoabsorpce při zvýšených teplotách
Mačkal, Adam ; Hazdra, P. ; Hulicius, Eduard ; Pangrác, Jiří ; Melichar, Karel
Electro-optical characterisation of semiconductor lasers with very thin strained InAs layers in GaAs. The lasers exhibit high optical recombination efficiency, low threshold current and capability to operate at elevated temperatures
Lasery s tenkými InAs vrstvami v GaAs - absorpce a elektroluminiscence
Mačkal, Adam
Contribution presents the electroluminescence, photoabsorption and polarization properties of semiconductor lasers with thin strained InAs layers in GaAs at elevated temperature (above 25.sup.o./sup.C). The lasers exhibit high optical recombination efficiency, low threshold current density and wide temperature operation range

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