National Repository of Grey Literature 76 records found  beginprevious67 - 76  jump to record: Search took 0.02 seconds. 
Measurement of electro-optical properties of quantum-size structures based on InAs/GaAs - photocurrent and electroluminescence
Mačkal, Adam ; Hazdra, P. ; Hulicius, Eduard ; Oswald, Jiří ; Pangrác, Jiří ; Melichar, Karel ; Hospodková, Alice ; Šimeček, Tomislav
Contribution presents the electroluminescence, photoabsorption and polarization properties of semiconductor lasers with thin strained InAs layers in GaAs at elevated temperatures. The lasers exhibit high optical recombination efficiency, low threshold current density and wide temperature operation range (above 100řC).
Microstructure and phase composition of rapidly solidified Al-Ni-Zr alloys
Verner, J. ; Vojtěch, D. ; Bártová, Barbora ; Gemperle, Antonín ; Studnička, Václav
Aluminium alloys with transition elements prepared by rapid qienchinf methods have tendencies to form nanocrystalline and amorphous structures. These alloys high tensile strength and good stability at higher temperature. Microstructure, phase composition and changes at elevated temperature of AlNi 18.5 and AlNi 17 Zr 1.8 alloys have been investigated in our experimental study.
Vliv RF výboje na růst nanokrystalických diamantových vrstev deponovaných metodou pulsní laserové depozice
Novotný, Michal ; Jelínek, Miroslav ; Bulíř, Jiří ; Lančok, Ján ; Vorlíček, Vladimír ; Michalka, M. ; Popov, C.
In this paper, we report on the growth of NCD films by PLD in pure hydrogen ambient and by HPLD in Ar/H.sub.2./sub. ambient. HPLD systems were based on combination of PLD and addiational RF discharges. The deposited films were studied using Alfastep profilometer, X-ray diffraction, Raman spectroscopy and scanning electron microscopy
Nanokrystalické diamant/amorfní uhlík kompozitní vrstvy připraveny MWCVD
Popov, C. ; Kulisch, W. ; Boycheva, S. ; Jelínek, Miroslav
The aim of the present work was to prepare nanocomposite films in which both phases are composed of only one element - carbon, i.e. nanosized diamond crystallites embeded in an amorphous carbon matrix. In our study, emphasis was laid on the investigation of both the crystalline(e.g. crystallite size) and the amorphous (e.g. sp.sup.3./sup./sp.sup.2./sup. ratio, H content) fractions of these new nanocomposite films
Nanogranulární vrstvy Co-Al-O připravené laserovou ablací
Chayka, Oleksandr ; Kraus, Luděk ; Fendrych, František ; Kocourek, Tomáš ; Jelínek, Miroslav
The measurements of magnetic and transport properties of the films deposited by laser ablation show that the films prepared on room temperature substrates consist of single-domain nanosized Co particles embeded in an insulating matrix.The films deposited on heated substrates show two orders lower resistance and their MR is one order smaller. This can be explained by the appearance of metallic type conductivity in a network of particles that is presumably due to coalescence of the grains
Optické a transportní transienty v systémech kvantových teček
Král, Karel ; Zdeněk, Petr ; Khás, Zdeněk
Manifestation of special thermodynamic properties of quantum dots in optical measurements are theoretically analyzed
Intense XUV radiation as a new tool for material nanostructuring
Juha, Libor ; Rus, Bedřich ; Krása, Josef ; Krzywinski, J. ; Vacík, Jiří
It is reviewed on creation of non-periodical as well as periodical structures with a period shorter than 100nm by XUV radiation.
From lower fullerenes to carbon nanotubes (via higher fullerenes): investigating their behaviour under irradiation
Cejnarová, Andrea ; Juha, Libor ; Hamplová, Věra ; Kubát, Pavel
It is summarized how a chemical constitution of partical fullerene cage influences its physical (including photophysical) and chemical (including photochemical) properties.
Kvantově rozměrné struktury pro fotoniku a elektroniku, připravené pomocí MOVPE
Mačkal, Adam
Study of structural and electro-optical properties of the MOVPE grown lasers with .delta.-InAs multilayers
Lasery s tenkými InAs vrstvami v GaAs - absorpce a elektroluminiscence
Mačkal, Adam
Contribution presents the electroluminescence, photoabsorption and polarization properties of semiconductor lasers with thin strained InAs layers in GaAs at elevated temperature (above 25.sup.o./sup.C). The lasers exhibit high optical recombination efficiency, low threshold current density and wide temperature operation range

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