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Measurement of electro-optical properties of quantum-size structures based on InAs/GaAs - photocurrent and electroluminescence
Mačkal, Adam ; Hazdra, P. ; Hulicius, Eduard ; Oswald, Jiří ; Pangrác, Jiří ; Melichar, Karel ; Hospodková, Alice ; Šimeček, Tomislav
Contribution presents the electroluminescence, photoabsorption and polarization properties of semiconductor lasers with thin strained InAs layers in GaAs at elevated temperatures. The lasers exhibit high optical recombination efficiency, low threshold current density and wide temperature operation range (above 100řC).
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Vliv RF výboje na růst nanokrystalických diamantových vrstev deponovaných metodou pulsní laserové depozice
Novotný, Michal ; Jelínek, Miroslav ; Bulíř, Jiří ; Lančok, Ján ; Vorlíček, Vladimír ; Michalka, M. ; Popov, C.
In this paper, we report on the growth of NCD films by PLD in pure hydrogen ambient and by HPLD in Ar/H.sub.2./sub. ambient. HPLD systems were based on combination of PLD and addiational RF discharges. The deposited films were studied using Alfastep profilometer, X-ray diffraction, Raman spectroscopy and scanning electron microscopy
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Lasery s tenkými InAs vrstvami v GaAs - absorpce a elektroluminiscence
Mačkal, Adam
Contribution presents the electroluminescence, photoabsorption and polarization properties of semiconductor lasers with thin strained InAs layers in GaAs at elevated temperature (above 25.sup.o./sup.C). The lasers exhibit high optical recombination efficiency, low threshold current density and wide temperature operation range
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