Národní úložiště šedé literatury Nalezeno 5 záznamů.  Hledání trvalo 0.00 vteřin. 
Silver catalysed nanoscale silicon etching in water vapour
Křížek, Filip ; Pikna, Peter ; Fejfar, Antonín
N+-doped silicon substrates were etched by water vapour under the silver nanoparticles acting as a catalyst. Thin silver layer was deposited on two silicon wafers, where one of them was thermally annealed in nitrogen to create silver nanoparticles. Subsequently, both samples were annealed in water vapour and afterwards analysed by Scanning Electron Microscope. The images have shown that the annealed silver nanoparticles burrowed into the silicon substrate in the case of both samples. This new method of silicon etching introduces an alternative way of manufacturing nanohole arrays in silicon substrates.\n
Doped DLC coatings for biomedical applications
Písařík, Petr
Nowadays there are materials having excellent properties for use in medicine (Diamond-like carbon, Hydroxyapatite, …). Diamond-like carbon (DLC) is a metastable form of amorphous carbon containing bonded carbon atoms of sp2 and sp3 hybridized orbital. DLC layers are semiconductors with high mechanical hardness, chemical inertness, low coefficient of friction, high thermal conductivity, good electrical and optical properties, biocompatibility and no cytotoxicity. All properties of the films are not always ideal, so it is necessary to modify the layer. One example of how to modify the properties of thin layers are dopations. The incorporation of dopants in films may lead to greater multifunctionality and much improved properties. Most modifications were made to modify contact angle and surface energy, to reduce internal stresses, to decrease surface roughness, coefficient of friction or wear....
Nanopositioning with detection of a standing wave
Holá, M. ; Hrabina, J. ; Číp, O. ; Fejfar, Antonín ; Stuchlík, Jiří ; Kočka, Jan ; Oulehla, J. ; Lazar, J.
A measuring technique is intended for displacement and position sensing over a limited range with detection of standing-wave pattern inside of a passive Fabry-Perot cavity. In this concept we consider locking of the laser optical frequency and the length of the Fabry-Perot cavity in resonance. Fixing the length of the cavity to e.g. a highly stable mechanical reference allows stabilizing wavelength of the laser in air and thus to eliminate especially the faster fluctuations of refractive index of air due to air flow and inhomogeneity. Detection of the interference maxima and minima within the Fabry-Perot cavity along the beam axis has been tested and proven with a low loss transparent photodetector with very low reflectivity. The transparent photodetector is based on a thin polycrystalline silicon layer. Reduction of losses was achieved thanks to a design as an optimized set of interference layers acting as an antireflection coating. The principle is demonstrated on an experimental setup.
Měření elektrických vlastností křemíkových nanostruktur s použitím mikroskopie atomárních sil
Hývl, M. ; Fejfar, Antonín ; Vetushka, Aliaksi
Mikroskop atomárních sil (AFM) je mimo jiné možné použít k měření lokálních změn povrchového potenciálu či lokální vodivosti. Právě tyto vlastnosti jsou obzvláště zajímavé při studiu křemíkových struktur určených k fotovoltaickým aplikacím, jako například polykrystalický křemík či křemíkové dráty. V článku budou popsány jednotlivé měřící metody a ukázány výsledky těchto měření.
GaAsSb strain reducing layer covering InAs/GaAs quantum dots
Zíková, Markéta ; Hospodková, Alice ; Pangrác, Jiří ; Oswald, Jiří ; Kubištová, Jana ; Hulicius, Eduard ; Komninou, Ph. ; Kioseoglou, J. ; Nikitis, F.
GaAsSb is often used as a capping material for InAs quantum dots (QDs) due to its suitable conduction band alignment and suppression of In segregation from QDs during the capping process.We have found out that during the GaAsSb layer growth, Sb atoms segregate above InAs QDs, which is proved by the AFM and HRTEM measurements. For higher amount of Sb in GaAsSb, the measured photoluminescence (PL) has longer wavelength, but if it is too high, the structure may become type II with decreased PL intensity. For thick GaAsSb layer, the PL intensity decreases, because only big QDs participate to the PL.

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