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Light ceramic materials for ballistic protection
Greguš, Peter ; Pouchlý, Václav (referee) ; Salamon, David (advisor)
This thesis gives a comprehensive characterization of lightweight non-oxide ceramic materials for ballistic applications, an overview of production technologies and processing of boron carbide B4C and its ceramic-based composites. A framework for evaluating the ballistic resistance of the material based on mechanical properties is shown there. It can be used in experiments without normalized equipment. The experiments including B4C + Si, B4C + Ti composites, and application of Spark plasma sintering (SPS) were designed according to outputs from the theoretical part. The volume fractions of Si, Ti dopants were optimized based on ongoing chemical reactions during sintering. The obtained samples were subjects of mechanical testing which results were compared to identify the ideal ratio of matrix and reinforcement. As the best suited material for ballistic protection, B4C + 1,0 obj. % reaches these values of parameters; hardness = 3502 ± 122 HV1; fracture toughness KIC = 2,97 ± 0,03 MPam^0,5.
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Electroerosion wire cutting of technical ceramics
Habovštiaková, Mária ; Mouralová, Kateřina (referee) ; Osička, Karel (advisor)
The presented diploma thesis deals with the issue of wire electrical discharge machining of SiSiC ceramics. The first part explains the principles of electrical discharge machining, describes the WEDM technology and presents the properties of the advanced ceramics. The second part consists of a detailed analysis of the cutting process of eighteen samples obtained with systematically changing process parameters. Based on the obtained results from EDX analysis, SEM electron microscopy and topography there was performed an analysis of the influence of process parameters on the cutting speed, surface roughness, kerf width and number of wire breaks with usage of the selected brass cutting wire. From the evaluated results it was possible to select a combination of parameters that ensured a stable machining process.
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Structure defects in SiC radiation detectors
Zetek, Matyáš ; Belas, Eduard (advisor)
Silicon carbide (SiC), is a wide band gap (2.4 eV < Eg < 3.3 eV) semiconducting material well known for its potential applications in high-temperature, high-power, high-frequency or hard radiation resistant devices. In this thesis, we are broadening elementary knowledge about this material. We identify energy levels in the material, using Photo-Hall effect spectroscopy supported by the temperature dependency of classic Hall effect measurement and temperature dependent photoluminescence. This knowledge is essential to allow SiC application as a radiation detector.
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Role of hydrogen during growth of epitaxial graphene on SiC
Sýkora, Petr ; Kunc, Jan (advisor) ; Čechal, Jan (referee)
This work is focused on preparation of graphene by epitaxial growth on silicon face of silicon carbide. In the introduction, the interesting properties of graphene are briefly described, and its possible applications are mentioned. Subsequently, the methods of preparation are discussed with an emphasis on epitaxial growth and the role of hydrogen on the process itself. Further, the possible ways of measuring graphene samples are explained and three of them are analyzed in more detail - Raman spectroscopy, atomic force microscopy, and Hall effect measurement. The experiment itself is focused on the effect of argon-hydrogen atmosphere on the growth of graphene. 1
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Structure defects in SiC radiation detectors
Zetek, Matyáš ; Belas, Eduard (advisor) ; Hazdra, Pavel (referee)
Silicon carbide (SiC), is a wide band gap (2.4 eV < Eg < 3.3 eV) semiconducting material well known for its potential applications in high-temperature, high-power, high-frequency or hard radiation resistant devices. In this thesis, we are broadening elementary knowledge about this material. We identify energy levels in the material, using Photo-Hall effect spectroscopy supported by the temperature dependency of classic Hall effect measurement and temperature dependent photoluminescence. This knowledge is essential to allow SiC application as a radiation detector.
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Design inverter using semiconductor on based SiC
Kharchenko, Vadym ; Procházka, Petr (referee) ; Kuzdas, Jan (advisor)
This work builds on a semester project 2. from the winter semester of this academic year. The aim of this thesis is the design of converter using semiconductor components based on SiC technology. This converter is used in the construction of quick charger for electric vehicles. The design of this converter must be based on the requirements for compliance voltage safety. It describes the design of power components used in the construction of this facility, the determination of their losses and determines the overall efficiency of the converter. There is also proposed mathematical model of high-frequency transformer and made his simulation in Matlab-Simulink.
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Design of an effusion cell for the deposition of Sn and Zn ultrathin layers
Horák, Stanislav ; Kolíbal, Miroslav (referee) ; Mach, Jindřich (advisor)
This bachelor thesis deals with the design and the construction of effusion cells for the deposition of zinc and tin ultrathin layers. In the introductory part there is an explanation of principles of eusion cells' functions, like a molecular beam epitaxy (MBE) or a construction of the efussion ow. Furthermore, the work describes a general principles of a ccreation of the atom sources. Theoretical part ends with review about the growth of ultrathin layers and nanostructures of zinc, tin and their compounds. Experimental part provides a design of the effusion cells with radiation heating from silicon carbide and heating by electrons impact. The complete drawing documentation of the designed effusion cells is included in the attachment.
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Testing of Surge Arresters
Jeřábek, Lukáš ; Paar, Martin (referee) ; Krbal, Michal (advisor)
This bachelor's thesis is devoted to metal oxide surge arresters. After historical and theoretical introduction, which explains their principles and describes their characteristical properties, analysis of the standard IEC 60099-4 and testing according to the standard with focus on the type tests follows. This chapter is also amended with review of the standard's imperfections and with its most probable future development. The work concludes with a market survey, a review of the largest manufacturers and a comparison of their products.
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Market survey of high power semiconductor devices
Jankovský, Martin ; Rujbrová, Šárka (referee) ; Zmrzlá, Petra (advisor)
Hlavním tématem práce jsou moderní výkonové polovodičové součástky. Jsou diskutovány i rozvíjející se materiály s velkou šířkou zakázaného pasu a jejich elektrické vlastnosti. Práce je pak zaměřena na tyto moderní součástky, včetně jejich teorie, aplikace a dostupnosti na trhu. Dále práce předkládá tabulky jednotlivých zařízení, které jsou nabízeny evropskými předními výrobci polovodičů.
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