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Plasmachemical processing of fibrous reinforcements for polymer composites
Knob, Antonín ; Lapčík, Ĺubomír (referee) ; Čech, Vladimír (advisor)
The diploma thesis is aimed at coating of glass fibers using tetravinylsilane as a monomer by Plasma-Enhanced Chemical Vapor Deposition (PECVD). The surface modified fibers were used as reinforcements for unsaturated polyester resin to form composites of controlled interphase. Chemical and mechanical properties of thin films were controled by the effective power. Determination of fiber-matrix adhesion and an influence of polymer-interface on mechanical properties of composites were characterized by Scanning Electron Microscopy (SEM) and microindentation technique using Interfacial Testing System (ITS) enabling to measure the interfacial shear strength.
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Polymer composites with controlled interphase
Zvonek, Milan ; Knob, Antonín (referee) ; Čech, Vladimír (advisor)
Cieľom diplomovej práce je príprava polymerných kompozitov vyztužených sklenenými vláknami s riadenou medzifázou za použitia metódy plazmochemickej depozície z plynnej fáze a monomeru tetravinylsilanu. Teoretická časť je zameraná na literárnu rešerš o plazme, plazmovej polymerácií, tenkých vrstvách a kompozitoch. Experimentálna časť popisuje použité materiály a aparaturu použitú na povrchovú modifikáciu sklenených vlákien a prípravu vláknom vyztužených kompozitov. Povrchová úprava sklenených vlákien prebiehala za rôznych depozičných podmienok. Chemické a mechanické analýzy vytvorenej medzivrstvy prebiehali za použitia FTIR spektrometrie a vrypového testu. Vliv povrchovej úpravy bol zistený pomocou získanej interlaminárnej šmykovej sily použítím testu krátkych trámečkov.
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Organosilicon plasma investigated by mass spectrometry
Moravanský, Martin ; Bránecký, Martin (referee) ; Čech, Vladimír (advisor)
This bachelor thesis deals with plasma-enhanced chemical vapor deposition (PECVD) and the use of mass spectrometry to monitor the processes in plasma during the deposition of thin film. Tetravinylsilane plasma was used in the process of forming a thin film on the silicon wafer. The background of the spectrometer, the residual gases in the plasma reactor at basic pressure were characterized and the plasma polymerization process was monitored. This process was monitored with increasing effective power (2-150 W). The obtained mass spectra were assigned and described in detail.
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Nanolayered Composites
Kontárová, Soňa ; Salyk, Ota (referee) ; Mistrík, Jan (referee) ; Čech, Vladimír (advisor)
Tato studie je zaměřena na základní výzkum tenkých vrstev plazmových polymerů a vliv depozičních podmínek na strukturu a vlastnosti jednotlivých vrstev a multivrstev připravených pomocí metody PE CVD. Jednotlivé vrstvy a multivrstvy a-SiC:H byly deponovány na křemíkové substráty z monomeru tetravinylsilanu (TVS) při různých výkonech v kontinuálním a pulzním režimu. Vrstvy byly rozsáhle zkoumány pomocí spektroskopické elipsometrie, nanoindentace, mikroskopie atomárních sil (AFM), rentgenové fotoelektronové spektroskopie (XPS), spektroskopie Rutherfordova zpětného rozptylu (RBS), rentgenové reflektivity, Fourierovy transformační infračervené spektroskopie (FTIR) a měření kontaktního úhlu, pro zjištění jejich optických, mechanických a chemických vlastností. Byl zkoumán a prokázán vliv depozičních podmínek na fyzikálně-chemické vlastnosti pp-TVS vrstev. Jednotlivé vrstvy byly v rámci po-depoziční úpravy vystaveny UV záření a byl zkoumán účinek stárnutí a vliv UV záření na jejich fyzikální a chemické vlastnosti. Multivrstevnaté struktury (plazmaticky polymerizované 2-vrstvy a 10-ti-vrstvy) s tloušťkou jednotlivých vrstev od 0,5 µm do 25 nm byly úspěšně deponovány a charakterizovány pomocí elipsometrické spektroskopie. Na základě získaných poznatků je možné připravit materiály s vlastnostmi upravenými podle požadavků pro využití v nanokompozitních aplikacích a optických zařízeních.
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Deposition and optical properties of thin films and layered structures by PECVD
Kucharčík, Jan ; Boušek, Jaroslav (referee) ; Čech, Vladimír (advisor)
Thesis in theoretical part is focused on the principle of spectroscopic ellipsometry and formation of thin films by plasma-enhanced chemical vapor deposition (PECVD). In the experimental part we describe the deposition system, ellipsometer and mathematical evaluation of ellipsometric data, materials used for film formation and processing of the samples. Single-layer and multilayer structures of polymeric materials were prepared. We revealed that the optical properties of thin films are independent of film thickness. We also described the effect of the effective power and deposition gas mixture on optical properties of thin films.
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Organosilicon plasma investigated by mass spectrometry
Moravanský, Martin ; Bránecký, Martin (referee) ; Čech, Vladimír (advisor)
This bachelor thesis deals with plasma-enhanced chemical vapor deposition (PECVD) and the use of mass spectrometry to monitor the processes in plasma during the deposition of thin film. Tetravinylsilane plasma was used in the process of forming a thin film on the silicon wafer. The background of the spectrometer, the residual gases in the plasma reactor at basic pressure were characterized and the plasma polymerization process was monitored. This process was monitored with increasing effective power (2-150 W). The obtained mass spectra were assigned and described in detail.
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Study of low-temperature plasma products using mass spectrometry and their relation to thin film chemistry
Maršálek, Blahoslav ; Bránecký, Martin (referee) ; Čech, Vladimír (advisor)
The aim of this thesis was to analyse and interpret the spectra of tetravinylsilane as a function of plasma discharge power in order to find a relationship between plasma products, layer deposition and thin film chemistry. Another objective was to carry out a literature search in the field of plasma-enhanced chemical vapour deposition (PECVD) and mass spectrometry. Low temperature organosilicate-based plasma technology enables the synthesis of specific materials with controlled chemical and physical properties. The targeted synthesis of surfaces with controlled properties is determined by the atomic and molecular processes in the plasma, which are responsible for building the chemical structure and the resulting material in the form of a thin film. In this work, mass spectrometry has been used to detect and quantify the particles produced in the PECVD process, which is one of the methods that allow the characterization and identification of plasma products. Analysis of the mass spectra revealed that the molecules responsible for the growth of the layer contain carbon and silicon. The deposition rate determined by in situ spectroscopic ellipsometry correlates quantitatively with the flux of carbon and silicon particles that are chemisorbed on the film surface. The ratio of carbon and silicon deposited on the surface also correlates strongly with the C/Si flux ratio of the power driven plasmas. The contribution of silicon-containing particles as building blocks to the film growth decreases with increasing power and accounts for 20% (2 W), 5% (10 W) and only 1% (75 W) of the total chemisorbed fraction. This ratio between bound silicon containing particles and carbon particles affects the elemental composition and chemical structure of the deposited layers. The relationships between plasmachemical processes and particle adhesion on the surface are quite complex. The adhesion of silicon particles first increases sharply to a maximum at 25 W and then gradually decreases, which is characteristic of the so-called precursor-deficient PECVD. Similarly, the concentration of vinyl groups incorporated into the deposited layer and the fraction of sp2 hybridization of carbon correlate with the particle fluxes of the corresponding plasma. This work has demonstrated that mass spectroscopy is a suitable method for the study of plasmachemical deposition from the gas phase (PECVD). PECVD technology is promising for the deposition of silicon-containing layers, which is technologically applicable in many directions of materials research.
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Synthesis of low-crosslinked polymers by plasma polymerization
Kuchtová, Štěpánka ; Bránecký, Martin (referee) ; Čech, Vladimír (advisor)
This bachelor thesis deals with plasma enhanced chemical vapour deposition (PECVD), specifically plasma polymerisation, which has been used for the synthesis of low density crosslinked polymer thin films. Organosilicon thin films were deposited on a silicon substrate by radio frequency (RF) capacitively coupled plasma in a deposition chamber. Spectroscopic ellipsometry was used to determine the layer thickness and its optical properties. The chemical structure of the layers was investigated by Fourier transform infrared spectroscopy and the mechanical properties were investigated by nanoindentation. The effect of power and self-bias (USB) on the chemical structure, mechanical and optical properties of the as-prepared layers, which are related to the crosslinking density, was investigated in the context of achieving low crosslinking density of the material. Low crosslinked plasma polymers were synthesized at a self-bias level of 1 V, which corresponds to an approximate RF power of 0,1 W. This material can be characterized by a density of 1, 2 g·cm-3 an elastic modulus of 4 GPa, a hardness of 0,04 GPa and a refractive index of 1.53 at 633 nm (He-Ne laser wavelength). Infrared spectroscopy confirmed that this plasma polymer is composed of a carbon network with fewer embedded silicon atoms and, in particular, the highest concentration of vinyl groups compared to plasma polymers prepared at higher powers.
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Chemical analysis of a-CSi:H and a-CSiO:H films
Olivová, Lucie ; Franta, Daniel (referee) ; Čech, Vladimír (advisor)
Plasma-enhanced chemical vapor deposition is a promising technology for the preparation of materials in the form of thin films with controlled physical-chemical properties, which can be affected by changing input precursors or deposition conditions as needed. In this thesis, plasma nanotechnology was used to synthesize thin films on silicon wafers. Tetravinylsilane was chosen as a precursor for the synthesis of the films. In addition to pure tetravinylsilane, mixtures of tetravinylsilane with argon and mixtures of tetravinylsilane with oxygen were also used as input precursors for film deposition, in different proportions of the individual component in the deposition mixture. Using chemical analyses, specifically infrared spectroscopy, photoelectron spectroscopy and selected ion techniques, the chemical structure of the prepared films was examined in detail and the dependence of this structure on deposition conditions and input precursors was studied. This thesis confirms, that by changing effective power supplied to the plasma discharge and selecting different input precursors, it is possible to control chemical structure, and thus the properties of the prepared nanolayers.
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Infrared spectroscopy of thin films
Kiss, Andrej ; Čáslavský, Josef (referee) ; Čech, Vladimír (advisor)
Cílem této bakalářské práce je literární rešerše v oblasti tenkých vrstev, plazmochemické depozice z plynné fáze a infračervené spektroskopie Fourierovou transformací, a měření infračervených spekter tenkých vrstev a charakterizace jejich chemické struktury na základě změřených spekter. Pomocí infračervené spektroskopie Fourierovou transformací bylo měřeno pět vzorků tenkých polymerních vrstev z tetravinylsilanu, vytvořených na křemíkovém substrátu pomocí plazmochemické depozice z plynné fázi s efektivním výkonem v rozmezí od 2 W do 150 W. Měření odhalilo chemické vazby přítomné ve vzorcích a jak se struktura měnila s měnící se efektivním výkonem. Snížení absorpčních pásů s přítomností vodíku naznačuje zvýšení zesítění se zvýšeným efektivním výkonem. Také snížení absorpčních pásů s přítomností křemíku poskytuje důkaz pro zvýšení poměru C/Si. Tyto výsledky nám pomáhají porozumět charakteristikám těchto tenkých vrstev a přispívají k pochopení procesu plazmochemické depozice z plynné fáze.
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