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Infrared spectroscopy of thin films
 Kiss, Andrej ; Čáslavský, Josef (oponent) ; Čech, Vladimír (vedoucí práce)
The objective of this Bachelor thesis is a literary research in the fields of thin films, plasma enhanced chemical vapor deposition technique, and Fourier transform infrared spectroscopy in order to measure the infrared spectra of thin films and characterise its chemical structure based on the measured spectra. Five samples of plasma polymer films of tetravinylsilane, deposited on silicon wafers using plasma enhanced chemical vapor deposition with effective power ranging from 2 to 150 W were measured with Fourier transform infrared spectroscope. The measurement revealed the chemical bonds present in the five samples and how the structure changed with changing effective power. The decrease in the absorption bands with hydrogen presence suggest an increase of crosslinking with enhanced power. Also, the decrease in the band with silicon presence provides evidence for the increase of C/Si ratio. These results help us understand the characteristics of these thin films and contribute to the understanding the plasma enhanced chemical vapor deposition process.
Úplný záznam
Infrared spectroscopy of thin films
 Kiss, Andrej ; Čáslavský, Josef (oponent) ; Čech, Vladimír (vedoucí práce)
The objective of this Bachelor thesis is a literary research in the fields of thin films, plasma enhanced chemical vapor deposition technique, and Fourier transform infrared spectroscopy in order to measure the infrared spectra of thin films and characterise its chemical structure based on the measured spectra. Five samples of plasma polymer films of tetravinylsilane, deposited on silicon wafers using plasma enhanced chemical vapor deposition with effective power ranging from 2 to 150 W were measured with Fourier transform infrared spectroscope. The measurement revealed the chemical bonds present in the five samples and how the structure changed with changing effective power. The decrease in the absorption bands with hydrogen presence suggest an increase of crosslinking with enhanced power. Also, the decrease in the band with silicon presence provides evidence for the increase of C/Si ratio. These results help us understand the characteristics of these thin films and contribute to the understanding the plasma enhanced chemical vapor deposition process.
Úplný záznam

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