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Kinetika doznívání scintilačních krystalů pro detektory elektronů v SEM
Schauer, Petr
A study of the decay kinetics of YAG:Ce single crystal scintillators for SEM is presented in this paper. The principal quantities of image quality in SEM are contrast, spatial resolution, and noise. However, to quantify the overall performance of an imaging system, the detective quantum efficiency (DQE) is a better tool as it includes both the modulation transfer function and the noise power spectrum. This means that for a detector to have high DQE, it should possess not only high efficiency and low noise, but also good kinetic properties. Utilizing of the cathodoluminescence decay results, a schematic kinetic model of radiative and nonradiative transitions in the YAG:Ce single crystals is presented.
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Coulombovské interakce v iontových a elektronových svazcích
Radlička, Tomáš
The article describes the approach and results of simulation of Coulomb interactions in ion and electron beams. The description of the ion beam in the vicinity of LMIS is presented including the effect on the energy and spatial distribution. The electron beam lithography is the second described system. We were interested in the effect of the coulomb interactions on the focusing of the beam.
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Metody přímého zobrazování hustoty stavů pomocí elektronů
Pokorná, Zuzana ; Frank, Luděk
Applicability of the SLEEM method for direct mapping of LDOS is the topic of the present study. The main issues include managing of the non-negligible angular aperture of the incident beam and even of the rocking connected with beam scanning over the field of view. These conditions require the contrast forming model to be reconsidered.
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Režim katodové čočky v rastrovacím elektronovém mikroskopu
Müllerová, Ilona
Electron optical characteristics of the cathode lens mode, enabling one to decelerate the electron beam bombarding the specimen in a scanning electron microscope down to arbitrarily low energies, are summarized. Contrast mechanisms appearing at very low energies below 100 eV are described, together with detection strategies capable of acquiring these contrasts. Illustration examples are provided.
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Zobrazení dopantu v polovodiči s pomocí sekundárních elektronů v LESEM
Mika, Filip ; Frank, Luděk
One of the crucial parameters in characterization of semiconductor devices is the dopant distribution profile. Details in both lateral and in-depth distributions of dopants fall at least in the same order of magnitude. Consequently, the device characterization becomes a non-trivial task. Two-dimensional dopant profiling in this study was made in the cathode lens equipped low energy scanning electron microscope.
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