Original title: Reliability of WBG Transistors
Authors: Horký, Jan
Document type: Papers
Language: eng
Publisher: Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií
Abstract: Silicon Carbide (SiC) and Gallium Nitride (GaN) transistors have the potential to revolutionize power electronics industry. They have better resistance, size, and efficiency than current Silicon (Si) transistors. On the other hand, as Silicon FET has been used for several decades, its reliability and robustness has been well known and documented. The aim of this paper is to present a review of reliability and radiation issues of GaN and SiC transistors in order to mitigate potential issues in future designs.
Keywords: Bandgap; GaN; HEMT; Radiation; Reliability; Robustness; Si; SiC; Transistor
Host item entry: Proceedings I of the 30st Conference STUDENT EEICT 2024: General papers, ISBN 978-80-214-6231-1, ISSN 2788-1334

Institution: Brno University of Technology (web)
Document availability information: Fulltext is available in the Brno University of Technology Digital Library.
Original record: https://hdl.handle.net/11012/249248

Permalink: http://www.nusl.cz/ntk/nusl-622566


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