Home > Conference materials > Papers > Conjugated Silicon – Based Polymer Resists for Nanotechnologies: EB and UV Mediated Degradation Processes in Polysilanes
Original title:
Conjugated Silicon – Based Polymer Resists for Nanotechnologies: EB and UV Mediated Degradation Processes in Polysilanes
Authors:
Schauer, F. ; Schauer, Petr ; Kuřitka, I. ; Hua, B. Document type: Papers Conference/Event: CJCS’09 - Czech-Japan-China Cooperative Symposium on Nanostructure of Advanced Materials and Nanotechnology /4./, Brno (CZ), 2009-08-10 / 2009-08-14
Year:
2009
Language:
eng Abstract:
The main purpose of this paper is to compare the photoluminescence (PL) and cathodoluminescence (CL) after major degradation, predominantly in long wavelength range 400 - 600 nm, studying the disorder due to dangling bonds, conformational transformations and weak bonds created by the degradation process.
Keywords:
cathodoluminescence; photoluminescence; silicon-based polymer resist Project no.: CEZ:AV0Z20650511 (CEP) Host item entry: Proceedings of the 4th Czech-Japan-China Cooperative Symposium on Nanostructure of Advanced Materials and Nanotechnology (CJCS’09), ISBN 978-80-254-4535-8
Institution: Institute of Scientific Instruments AS ČR
(web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences. Original record: http://hdl.handle.net/11104/0179805