Název: Characterization of hydrogenated silicon thin films and diode structures with integrated germanium nanoparticles
Autoři: Stuchlík, J. ; Fajgar, R. ; Remeš, Z. ; Kupčík, Jaroslav ; Stuchlíková, H.
Typ dokumentu: Příspěvky z konference
Konference/Akce: NANOCON 2017. International Conference on Nanomaterials - Research & Application /9./, Brno (CZ), 20171018
Rok: 2018
Jazyk: eng
Abstrakt: P-I-N diode structures based on the thin films of amorphous hydrogenated silicon (a-Si: H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique were prepared with embedded Si and Ge nanoparticles. The Reactive Laser Ablation (RLA) of germanium target was used to cover the intrinsic a-Si: H layer by Ge NPs under a low pressure of the silane. The RLA was performed using focused excimer ArF laser beam under SiH4 background atmosphere. Reaction between ablated Ge NPs and SiH4 led to formation of Ge NPs covered by thin GeSi: H layer. The deposited NPs were covered and stabilized by a-Si: H layer by PECVD. Those two deposition processes were alternated repeatedly. Volt-ampere characteristics of final diode structures were measured in dark and under illumination as well as their electroluminescence spectra.
Klíčová slova: a-Si: H; Ge; nanoparticles; PECVD; PIN diode
Zdrojový dokument: Nanocon 2017 : conference proceedings : 9th International Conference on Nanomaterials - Research & Application, ISBN 9788087294819

Instituce: Ústav anorganické chemie AV ČR (web)
Informace o dostupnosti dokumentu: Dokument je dostupný v příslušném ústavu Akademie věd ČR.
Původní záznam: http://hdl.handle.net/11104/0292719

Trvalý odkaz NUŠL: http://www.nusl.cz/ntk/nusl-391522


Záznam je zařazen do těchto sbírek:
Věda a výzkum > AV ČR > Ústav anorganické chemie
Konferenční materiály > Příspěvky z konference