Original title: Examination of semiconductor structures with slow electrons
Authors: Frank, Luděk ; Müllerová, Ilona
Document type: Papers
Conference/Event: CSEM, Vranovská Ves (CZ), 2002-02-08 / 2002-02-09
Year: 2002
Language: eng
Abstract: Possibilities for visualization of the doped areas and variances in the local density of electron states are briefly reviewed. First examples are presented of utilizing very slow electrons in a cathode lens equipped SEM for this purpose. These include acquisition of the doping contrast via secondary electrons and observation of the local energy band structure by means of elastically backscattered electrons.
Keywords: cathode lens equipped SEM; slow electrons
Project no.: CEZ:AV0Z2065902 (CEP), IAA1065901 (CEP)
Funding provider: GA AV ČR
Host item entry: Proceedings of the 2nd annual meeting of the Czechoslovak microscopy society, ISBN 80-238-8749-1

Institution: Institute of Scientific Instruments AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0101096

Permalink: http://www.nusl.cz/ntk/nusl-29534


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Research > Institutes ASCR > Institute of Scientific Instruments
Conference materials > Papers