Original title: Application of low-energy backscattered electron detection in the inspection of semiconductor devices technology
Authors: Hutař, Otakar ; Oral, Martin ; Müllerová, Ilona ; Romanovský, Vladimír
Document type: Papers
Conference/Event: EUREM /12./ - European Congress on Electron Microscopy, Brno (CZ), 2000-07-09 / 2000-07-14
Year: 2000
Language: eng
Abstract: The low energy backscattered electron (BSE) detector, equipped with an electrostatic immersion lens for the retardation of the primary electron beam (PE) was elaborated and used for the imaging of surface semiconductor device specimens in a commercial SEM. Despite the signal of BSE is generally lower than that obtained using secondary electrons (SE), the achieved results predestine this BSE detection method as a suitable tool for the inspection of the fine structures of semiconductor devices and linewidth measurement of critical dimension (CD).
Project no.: CEZ:AV0Z2065902 (CEP), IBS2065017 (CEP)
Funding provider: GA AV ČR
Host item entry: Proceedings of the 12th European Congress on Electron Microscopy, ISBN 80-238-5503-4
Note: Související webová stránka: mailto:ota@isibrno.cz

Institution: Institute of Scientific Instruments AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0100855

Permalink: http://www.nusl.cz/ntk/nusl-29457


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Research > Institutes ASCR > Institute of Scientific Instruments
Conference materials > Papers