Original title: Modeling of diffusion barrier in nanocrystalline growth
Authors: Čermák, Jiří ; Rothová, Věra
Document type: Papers
Conference/Event: International Conference NANO /03./, Brno (CZ), 2003-10-21 / 2003-10-23
Year: 2003
Language: eng
Abstract: The diffusion of Ge, simulationg the diffusion of Si was studied in eutectic Fe-Nb, in iron and in the Fe2Nb compound, which models the Nb-rich envelope of growing FexSi crystallites in FINEMETs.
Keywords: FINEMET; Ge diffusion; nanocrystalline growth
Project no.: CEZ:AV0Z2041904 (CEP), GA106/01/0384 (CEP), IBS2041105 (CEP), Z20419004-I004
Funding provider: GA ČR, GA AV ČR, GA AV ČR
Host item entry: NANO 03, ISBN 80-214-2527-X

Institution: Institute of Physics of Materials AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0075035

Permalink: http://www.nusl.cz/ntk/nusl-26594


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Research > Institutes ASCR > Institute of Physics of Materials
Conference materials > Papers
 Record created 2011-07-01, last modified 2021-11-24


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