Original title:
(100) substrate processing optimization for fabrication of smooth boron doped epitaxial diamond layer by PE CVD
Authors:
Mortet, Vincent ; Fekete, Ladislav ; Ashcheulov, Petr ; Taylor, Andrew ; Hubík, Pavel ; Trémouilles, D. ; Bedel-Pereira, E. Document type: Papers Conference/Event: International Conference NANOCON /6./, Brno (CZ), 2014-11-05 / 2014-11-07
Year:
2015
Language:
eng Abstract:
Boron doped diamond layers were grown in an SEKI AX5010 microwave plasma enhanced chemical vapour deposition system. Effect of surface preparation, i.e. polishing and O2/H2 plasma etching on epitaxial growth on type Ib (100) HPHT synthetic diamonds were investigated. Using optimized substrate preparation, smooth (RRMS ~ 1 nm) boron doped diamond layers with metallic conduction and free of un-epitaxial crystallites were grown with a relatively high growth rate of 3.7 μm/h. Diamond were characterized by optical microscopy, optical profilometry, atomic force microscopy and Hall effect.
Keywords:
diamond; doping; PE CVD; surface treatment; thin film Project no.: GA13-31783S (CEP) Funding provider: GA ČR Host item entry: NANOCON 2014. 6th International conference proceedings, ISBN 978-80-87294-53-6
Institution: Institute of Physics AS ČR
(web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences. Original record: http://hdl.handle.net/11104/0263568