Original title: (100) substrate processing optimization for fabrication of smooth boron doped epitaxial diamond layer by PE CVD
Authors: Mortet, Vincent ; Fekete, Ladislav ; Ashcheulov, Petr ; Taylor, Andrew ; Hubík, Pavel ; Trémouilles, D. ; Bedel-Pereira, E.
Document type: Papers
Conference/Event: International Conference NANOCON /6./, Brno (CZ), 2014-11-05 / 2014-11-07
Year: 2015
Language: eng
Abstract: Boron doped diamond layers were grown in an SEKI AX5010 microwave plasma enhanced chemical vapour deposition system. Effect of surface preparation, i.e. polishing and O2/H2 plasma etching on epitaxial growth on type Ib (100) HPHT synthetic diamonds were investigated. Using optimized substrate preparation, smooth (RRMS ~ 1 nm) boron doped diamond layers with metallic conduction and free of un-epitaxial crystallites were grown with a relatively high growth rate of 3.7 μm/h. Diamond were characterized by optical microscopy, optical profilometry, atomic force microscopy and Hall effect.
Keywords: diamond; doping; PE CVD; surface treatment; thin film
Project no.: GA13-31783S (CEP)
Funding provider: GA ČR
Host item entry: NANOCON 2014. 6th International conference proceedings, ISBN 978-80-87294-53-6

Institution: Institute of Physics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0263568

Permalink: http://www.nusl.cz/ntk/nusl-261323


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