guest ::
| Home > Conference materials > Papers > Silicon carbide for chemical application prepared by SPS method |
Original title:
Silicon carbide for chemical application prepared by SPS method
Authors: Brožek, Vlastimil ; Kubatík, Tomáš František ; Vilémová, Monika ; Mušálek, Radek ; Mastný, L.
Document type: Papers
Conference/Event: Mezinárodní chemicko-technologická konference/2./, Mikulov (CZ), 2014-04-07 / 2014-04-09
Year: 2014
Language: eng
Abstract: Silicon carbide discovered more than 121 years ago has a wide usage in the mechanical engineering industry as well as in electrical engineering.It is an excellent abrasive medium as well as a construction material with high resistance to mechanical and chemical deterioration.Under standard condition, silicon carbide has no melting point (decomposes at 2700 °C – principle used for industrial production of silicon),thus the bulk form must be prepared in a composite form with a metallic, ceramic or polymer binder. This method is suitable for tailoring of mechanical properties; nevertheless,it does not produce SiC form applicable for laboratory purposes.Binder-free sintering of SiC is practically impossible, despite decreased chemical resistivity of the produced material. Pure SiC is insoluble in all acids except hydrofluoric acid.Reaction of SiC with HF is enabled only due to residual SiO2 created during the industrial production.However, SiO2 located between the planes of growth of SiC
Keywords: impurities in silicon carbide; silicon carbide; silicon carbide corrosion; spark plasma sintering
Project no.: GB14-36566G (CEP)
Funding provider: GA ČR
Host item entry: Proceedings of the 2nd International Conference on Chemical Technology, ISBN 978-80-86238-64-7
Note: Související webová stránka: www.icct.cz
Institution: Institute of Plasma Physics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0236615
Permalink: http://www.nusl.cz/ntk/nusl-175328
The record appears in these collections:
Research > Institutes ASCR > Institute of Plasma Physics
Conference materials > Papers
Authors: Brožek, Vlastimil ; Kubatík, Tomáš František ; Vilémová, Monika ; Mušálek, Radek ; Mastný, L.
Document type: Papers
Conference/Event: Mezinárodní chemicko-technologická konference/2./, Mikulov (CZ), 2014-04-07 / 2014-04-09
Year: 2014
Language: eng
Abstract: Silicon carbide discovered more than 121 years ago has a wide usage in the mechanical engineering industry as well as in electrical engineering.It is an excellent abrasive medium as well as a construction material with high resistance to mechanical and chemical deterioration.Under standard condition, silicon carbide has no melting point (decomposes at 2700 °C – principle used for industrial production of silicon),thus the bulk form must be prepared in a composite form with a metallic, ceramic or polymer binder. This method is suitable for tailoring of mechanical properties; nevertheless,it does not produce SiC form applicable for laboratory purposes.Binder-free sintering of SiC is practically impossible, despite decreased chemical resistivity of the produced material. Pure SiC is insoluble in all acids except hydrofluoric acid.Reaction of SiC with HF is enabled only due to residual SiO2 created during the industrial production.However, SiO2 located between the planes of growth of SiC
Keywords: impurities in silicon carbide; silicon carbide; silicon carbide corrosion; spark plasma sintering
Project no.: GB14-36566G (CEP)
Funding provider: GA ČR
Host item entry: Proceedings of the 2nd International Conference on Chemical Technology, ISBN 978-80-86238-64-7
Note: Související webová stránka: www.icct.cz
Institution: Institute of Plasma Physics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0236615
Permalink: http://www.nusl.cz/ntk/nusl-175328
The record appears in these collections:
Research > Institutes ASCR > Institute of Plasma Physics
Conference materials > Papers
Record created 2014-10-02, last modified 2021-11-24