Original title: Oxygen Precipitation in CZ Si Wafers after High Temperature
Authors: Meduňa, M. ; Caha, O. ; Kuběna, J. ; Kuběna, A. ; Svoboda, Milan ; Buršík, Jiří
Document type: Papers
Conference/Event: Scientific and Business Conference SILICON 2010 /12./, Rožnov pod Radhoštěm (CZ), 2010-11-02 / 2010-11-05
Year: 2010
Language: eng
Abstract: In this work we study two stage and three stage annealing processes with application of Tabula rasa. The evolution of precipitates at various phases during annealing process for various temperatures was obtained from series of experimental techniques.
Keywords: oxygen precipitation; Si wafers
Host item entry: SILICON 2010. 12th Scientific and Business Conference, ISBN 978-80-254-7361-0

Institution: Institute of Physics of Materials AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0228230

Permalink: http://www.nusl.cz/ntk/nusl-166324


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Research > Institutes ASCR > Institute of Physics of Materials
Conference materials > Papers