Original title: Mapping of dopants in silicon by electron injection
Authors: Hovorka, Miloš ; Konvalina, Ivo ; Frank, Luděk ; Mikulík, P.
Document type: Papers
Conference/Event: Physics at Nanoscale. IUVSTA International Summer School /10./, Devět skal (CZ), 2012-05-30 / 2012-06-04
Year: 2012
Language: eng
Abstract: Dopants in sillicon based structures locally modifty the secondary electron emission, revealing in this way their distribution over the sample. For probing the doped structures usually the elctron beam is used at energies around 1keV. However, the very low landing energy range has proven itself an effecient tool for mapping dopant in semiconductors.
Keywords: electron injection; mapping of dopants in sillicon
Host item entry: Physic and Nanoscale. (Proceedings of the 10th IUVSTA International Summer School ), ISBN 978-80-260-0619-0

Institution: Institute of Scientific Instruments AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0215756

Permalink: http://www.nusl.cz/ntk/nusl-136013


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Research > Institutes ASCR > Institute of Scientific Instruments
Conference materials > Papers