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Efekt adsorbátů na submonovrstvový epitaxní růst
Kotrla, Miroslav
The influence of impurities on submonolayer growth is briefly summarized. Illustrative results of STM experiment and numerical simulations are presented. It is shown that when not noticed, effects of impurities may cause an incorrect evaluation of measurements of adatom diffusion.
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Strmé InAs/GaAs heteropřechody a velmi tenké kvantové jámy vypěstované pomocí MOVPE
Hulicius, Eduard ; Pacherová, Oliva ; Oswald, Jiří ; Hospodková, Alice ; Pangrác, Jiří ; Šimeček, Tomislav ; Melichar, Karel ; Petříček, Otto ; Chráska, T. ; Holý, V. ; Vávra, I. ; Ouattara, L.
We have found that the abruptness and symmetry on monoatomic scale is achievable with MOVPE technique as well. We are able to find only the periodicity in these structures while atomic resolution pictures give reliable thickness values.
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