Original title: MOVPE GaN/AlGaN HEMT nano-structures
Authors: Hulicius, Eduard ; Kuldová, Karla ; Hospodková, Alice ; Pangrác, Jiří ; Dominec, Filip ; Humlíček, J. ; Pelant, Ivan ; Cibulka, Ondřej ; Herynková, Kateřina
Document type: Papers
Conference/Event: NANOCON 2018 -International Conference on Nanomaterials - Research and Application /10./, Brno (CZ), 20181017
Year: 2019
Language: eng
Abstract: GaN/AlGaN-based high electron mobility transistors (HEMTs) attain better performance than their state-of-the-art full silicon-based counterparts do, offering higher power, higher frequency as well as higher temperature of operation and stability, although their voltage and current limits are somewhat lower than for the SiC-based HEMTs. GaN/AlGaN-based HEMTs are a potential choice for electric-powered vehicles, for which they are approved not only for their power parameters, but also for their good temperature stability, lifetime and reliability. It is important to optimize HEMT structures and their growth parameters to reach the optimum function for the real-world applications. HEMT structures were grown by MOVPE technology in AIXTRON apparatus on (111)-oriented single-surface polished Si substrates. Structural, optical and transport properties of the structures were measured by X-ray diffraction, optical reflectivity, time-resolved photoluminescence and micro-Raman spectroscopy.\n
Keywords: GaN; HEMT; MOVPE
Project no.: TH02010014 (CEP), LO1603 (CEP)
Funding provider: GA TA ČR, GA MŠk
Host item entry: NANOCON 2018 : Conference Proceedings of the International Conference on Nanomaterials - Research & Application /10./, ISBN 978-80-87294-89-5

Institution: Institute of Physics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0306581

Permalink: http://www.nusl.cz/ntk/nusl-409692


The record appears in these collections:
Research > Institutes ASCR > Institute of Physics
Conference materials > Papers