Original title: Characterisation of InAs/GaAs quantum dots by high resolution transmission electron microscopy
Authors: Zíková, Markéta ; Hospodková, Alice ; Pangrác, Jiří ; Hulicius, Eduard ; Komninou, Ph. ; Kioseoglou, J.
Document type: Papers
Conference/Event: Student Scientific Conference on Solid State Physics /4./, Nové Hrady (CZ), 2014-06-23 / 2014-06-27
Year: 2014
Language: eng
Abstract: The InAs/GaAs quantum dots (QDs) covered by GaAsSb strain reducing layer (SRL) have suitable properties for various applications. The GaAsSb SRL covering InAs QDs is used to improve the structure growth and the final parameters like QD density, QD size or photoluminesence. To obtain high-quality structure with required properties, the structure growth and final structure have to be deeply studied. Since the QDs and SRL system is surrounded by GaAs, the high resolution transmission electron microscopy (HRTEM) measurement was used to reveal the real material arrangement in a prepared sample. In this work we will discuss the results of following HRTEM measurements: flatness and thickness of prepared layers, QD size, atomic arrangement and composition of GaAsSb layer.
Keywords: GaAsSb; high resolution transmission electron microscopy; InAs; quantum dot
Project no.: GA13-15286S (CEP), 7AMB12GR034 (CEP)
Funding provider: GA ČR, GA MŠk
Host item entry: Sborník příspěvků 4. studentské vědecké konference fyziky pevných látek, ISBN 978-80-01-05565-6

Institution: Institute of Physics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0237147

Permalink: http://www.nusl.cz/ntk/nusl-181080


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