Original title: Luminescence of quantum dot heterostructures in applied electric field
Authors: Kubištová, Jana ; Zíková, Markéta ; Kuldová, Karla ; Pangrác, Jiří ; Hospodková, Alice ; Hulicius, Eduard ; Petříček, Otto ; Oswald, Jiří
Document type: Papers
Conference/Event: Studentská vědecká konference fyziky pevných látek /3./, Krkonoše (CZ), 2013-06-28 / 2013-07-02
Year: 2013
Language: eng
Abstract: In this work, photoluminescence (PL) and electroluminescence (EL) of samples with InAs/GaAs quantum dots were measured with electric voltage or current applied on the structure. The EL structures emitting at 1300 nm were prepared by using n-type substrate. By applying the electric voltage in reverse bias on the sample, the evinced PL may be switched off - it decreases rapidly with the applied voltage and is negligible at about 10 V. Such structures which PL intensity is tunable by applied voltage have a broad spectrum of applications in optoelectronics.
Keywords: GaAsSb; InAs/GaAs; luminescence; quantum dot
Host item entry: Studentská vědecká konference fyziky pevných látek /3./, ISBN 978-80-01-05344-7

Institution: Institute of Physics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0229898

Permalink: http://www.nusl.cz/ntk/nusl-170358


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