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National Repository of Grey Literature 5 records found  Search took 0.01 seconds. 
Selective growth of GaN nanostructures on silicon substrates
 Knotek, Miroslav ; Novák, Tomáš (referee) ; Voborný, Stanislav (advisor)
This thesis deals with deposition of gallium nitride thin films on silicon substrates covered by negative HSQ rezist. Rezist was patterned via electron beam lithography to create masks, where the selective growth of crystals was achieved. Growth of GaN layers was carried out by MBE method. For achievement of desired selective growth, the various deposition conditions were studied.
Detailed record
STM study of metal adatom mobility on Si(100) surface
 Rozbořil, Filip ; Ošťádal, Ivan (advisor) ; Mysliveček, Josef (referee)
Surface diffusion of group III and IV metals on Si(100) is studied. Three methods for obtaining diffusion barriers are presented and discrepancies in published results are discussed. Room temperature growth of Al on Si(100) is studied using STM, observing a monomodal scaled island size distribution function. A Kinetic Monte Carlo simulation model is employed to obtain bonding energies and diffusion barriers for Al/Si(100). The best agreement between the measured and simulated characteristics is found for strongly anisotropic diffusion with barriers 0.60 eV in the direction orthogonal to the Si dimer rows and 0.80 eV in the parallel direction. Modifications of the cooling system required for observing metal adatom diffusion on Si(100) using STM are described and the first low-temperature experiment is carried out.
Detailed record
STM study of metal adatom mobility on Si(100) surface
 Rozbořil, Filip ; Ošťádal, Ivan (advisor) ; Mysliveček, Josef (referee)
Surface diffusion of group III and IV metals on Si(100) is studied. Three methods for obtaining diffusion barriers are presented and discrepancies in published results are discussed. Room temperature growth of Al on Si(100) is studied using STM, observing a monomodal scaled island size distribution function. A Kinetic Monte Carlo simulation model is employed to obtain bonding energies and diffusion barriers for Al/Si(100). The best agreement between the measured and simulated characteristics is found for strongly anisotropic diffusion with barriers 0.60 eV in the direction orthogonal to the Si dimer rows and 0.80 eV in the parallel direction. Modifications of the cooling system required for observing metal adatom diffusion on Si(100) using STM are described and the first low-temperature experiment is carried out.
Detailed record
Selective growth of GaN nanostructures on silicon substrates
 Knotek, Miroslav ; Novák, Tomáš (referee) ; Voborný, Stanislav (advisor)
This thesis deals with deposition of gallium nitride thin films on silicon substrates covered by negative HSQ rezist. Rezist was patterned via electron beam lithography to create masks, where the selective growth of crystals was achieved. Growth of GaN layers was carried out by MBE method. For achievement of desired selective growth, the various deposition conditions were studied.
Detailed record
Velké objekty v MOVPE strukturách s InAs/GaAs kvantovými tečkami
 Samokhin, Jevgen ; Pangrác, Jiří ; Melichar, Karel ; Vavra, I. ; Jurek, Karel ; Mates, Tomáš ; Šimeček, Tomislav ; Hulicius, Eduard
The presence of large objects in MOVPE grown self-assembled quantum dot samples was studied. Creation of large objects and high indium concentration inside was explained as a combined process of accumulation of In atoms on the surface and their following long-range surface migration.
Detailed record

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