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Tuned semiconductor laser for the diagnostic of the channel waveguides
Ondráček, František ; Skalský, Miroslav ; Čtyroký, Jiří
In contribution is described new measuring set up with tuned semiconductor laser and there are given first results of spectral losses and group refractive index in various channel waveguides by using a resonator method. The waveguides were prepared in special glasses by ion exchanges method and in LiNbO.sub.3./sub. crystal by proton exchange and also by titan difusion. Experimental results have demonstrated accuracy and rate of this arangement. In conclusion we have shown the possibility of the next research.
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Optical properties of the GaN on sapphire
Skalský, Miroslav ; Janta, Jiří ; Čtyroký, Jiří ; Stejskal, J. ; Hüttel, I.
The method of mode spectroscopy was used to measure optical properties of epitaxial layers of gallium nitride (GaN) deposited onto the sapphire substrate. The results of the measurement of the layer thickness, refractive indices, and the attenuation of guided modes at the wavelengths of 632.8 nm and 781 nm are presented. From experimental values of attenuation of different guided modes, the contributions of bulk absorption and scattering at the interfaces of the layer to the total optical loss in the waveguide are determined.
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Zkušenosti s vlnovodnými lasery připravenými pulsní laserovou depozicí. (Experience with waveguide lasers fabricated by pulse laser deposition)
Lančok, Ján ; Jelínek, Miroslav ; Jastrabík, Ludvík ; Oswald, J. ; Nikl, Martin ; Polák, Karel ; Studnička, Václav ; Kubelka, J. ; Procházka, S. ; Šimečková, Marta ; Trtík, Vítězslav ; Čtyroký, Jiří ; Skalský, Miroslav ; Chvostová, Dagmar
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