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Application of Scanning Probe Microscope in Nanoscience and Nanotechnology
Konečný, Martin ; Klapetek, Petr (referee) ; Fejfar, Antonín (referee) ; Bartošík, Miroslav (advisor)
Tato doktorská práce se zabývá rastrovací sondovou mikroskopií (Scanning Probe Microscopy – SPM) a jejím využitím v nanovědách a nanotechnologiích. Konkrétně je zde kladem důraz především na pokročilé techniky mikroskopie atomárních sil (Atomic Force Microscopy – AFM), jako je Kelvinova silová mikroskopie (Kelvin Probe Force Microscopy – KPFM) a vodivostní AFM. Samotné aplikace těchto technik jsou dále zaměřené zejména na oblast výzkumu grafenu. V práci je nejprve stručně rozebrán princip fungování SPM a následně jsou diskutovány jednotlivé aplikace AFM a KPFM zaměřené na charakterizaci vlastností jak samotného gafenu, tak i zařízeních fungujících na jeho bázi. Dále se práce zabývá možnostmi využití AFM integrovaného v jednom zařízení spolu se rastrovacím elektronovým mikroskopem (Scanning Electron Microscopy - SEM). Z tohoto přehledu vyplývají čtyři hlavní témata doktorského výzkumu, které se věnují studiu přesunu elektrikého náboje mezi grafenovými nanostrukturami, přípravě a charakterizaci hydrogenovaného grafenu a grafen-kovových hybridních struktur s uplatněním v biosensorice. Aspekty jednotlivých témat jsou následně podrobně rozebrány a podpořeny adekvátními experimentálními výsledky. Na závěr jsou nastíněny plány budoucího výzkumu týkajícího se těchto čtyř témat
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Thin-Film Solar Cells Characterization and Microstructure Defect Analysis
Škvarenina, Ľubomír ; Šály,, Vladimír (referee) ; Fejfar, Antonín (referee) ; Macků, Robert (advisor)
Thin-film solar cells based on an absorber layer of chalcogenide compounds (CIGS, CdTe) are today among the most promising photovoltaic technologies due to their long-term ability to gain a foothold in mass commercial production as an alternative to conventional Si solar cells. Despite this success, the physical origin of the defects present in the thin films are still insufficiently elucidated, especially in the compounds of the chalcopyrite family Cu(In_{1x},Ga_{x})(S_{y},Se_{1y})_{2}. The research focuses on the identification and analysis of microstructural defects responsible for the electrical instability of chalcopyrite-based thin-film solar cells with a typical heterostructure arrangement ZnO:Al/i-ZnO/CdS/Cu(In,Ga)Se_{2}/Mo. The non-uniform polycrystalline nature of semiconductor materials in this complex multilayer structure requires a comprehensive analysis of electro-optical, structural and compositional properties associated with the actual morphology at the macroscopic, microscopic or even nanoscopic level. The observed predominant ohmic or non-ohmic current conduction in the dark transport characteristics was also reflected in the slope deviations of the excessive noise fluctuations, which were in the spectral domain exclusively in the form of flicker noise with dependency S_{i} ~ f^{1}. Spatially resolved electroluminescence based on stimulated photon emission by charge carriers injecting into the depletion region, not only showed a significantly inhomogeneous distribution of intensity in planar heterojunction under forward bias, but also revealed light emitting local spots in reverse bias due to a trap-assisted radiative recombination through the high density of defect states. Microscopic examination of the defect-related light emitting spots revealed rather extensive defective complexes with many interruptions through the layers, especially at the heterojunction CdS/Cu(In,Ga)Se_{2} interface. Besides, the high leakage current via these defective complexes subsequently led to a considerable local overheating, which caused a clearly observable structural and morphological changes, such as deviations in absorber layer stoichiometry due to Cu–In–Ga–Se segregation, Cu-rich and Ga-rich grains formation with an occurrence of Se-poor or Cu_{x}Se_{y} secondary phases regions, material redeposition accompanied by evaporation of ZnO:Al/i-ZnO/CdS layers together with the formation of Se structures on the surface around the defects. Within the research, analytical modelling of transport characteristics was implemented with parameters extraction of individual transport mechanisms to understand the non-ohmic shunt behaviour due to leakage current. In addition to the proper current path along the main heterojunction, the proposed model contains parasitic current pathways as a consequence of recombination-dominated charge transport or current conduction facilitated by multi-step tunnelling via high density of mid-gap defect states in the depletion region, ohmic leakage current caused by pinholes or low-resistance paths along grain boundaries in Cu(In,Ga)Se_{2}, or space-charge limited current due to metals diffusion from the ZnO:Al layer and grid Ag contacts through disruptions in i-ZnO/CdS layers.
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Study of photovoltaic nanostructures using microscopy methods
Hertl, Vít ; Valenta,, Jan (referee) ; Fejfar, Antonín (advisor)
V této diplomové práci je nejprve ve zkratce uvedena teorie fyziky solárních článků, kde jsou zmíněny klíčové procesy ovlivňující účinnost konverze slunečního záření na elektrickou energii. Dále je předložena rešerše o fotovoltaických nanostrukturách (nanodráty, nanokrystaly), jejichž implementací je možné účinnost solárních článků zvýšit. V přehledu experimentálních technik ke zkoumání fotovoltaických nanostruktur je důraz kladen zejména na korelativní měření pomocí SEM a AFM, vodivostního AFM, měření EBIC a mikroskopické měření elektroluminiscence. V experimentální části jsou předloženy výsledky měření struktur mikrokrystalického křemíku, vzorku hetero-přechodového Si solárního článku s kontakty na zadní straně (IBC-SHJ z projektu NextBase) a V-pitů vzorku InGaN/GaN kvantových jam. Měření elektroluminiscence bylo provedeno na vzorcích III-V polovodičů (InGaP, GaAs). Byly vypočítány jinak těžko dostupné charakteristiky III-V tandemových solárních článků pomocí elektroluminiscence a srovnání vlastností IBC-SHJ zjištěných pomocí mikroskopického měření elektroluminiscence a EBIC. Provedením experimentů bylo zjištěno, jakým způsobem se dělí proud vybuzený svazkem elektronů mezi hrot AFM a vzorek mikrokrystalického křemíku.
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Application of correlative AFM/SEM microscopy
Hegrová, Veronika ; Fejfar, Antonín (referee) ; Konečný, Martin (advisor)
This thesis is dealing with application of Correlative Probe and Electron Microscopy. All measurements were carried out by atomic force microscope LiteScope which is designed especially to be combined with electron microscopes. Advantages of Correlative AFM/SEM Microscopy are demonstrated on selected samples from field of nanotechnology and material science. Application of the correlative imaging was proposed and then realized particularly in case of low-dimensional structures and thin films. Further, this thesis deals with the possibility of combining Correlative AFM/SEM Microscopy with other integrated techniques of an electron microscope such as Focused Ion Beam and Energy Dispersive X-rays Spectroscopy.
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Silver catalysed nanoscale silicon etching in water vapour
Křížek, Filip ; Pikna, Peter ; Fejfar, Antonín
N+-doped silicon substrates were etched by water vapour under the silver nanoparticles acting as a catalyst. Thin silver layer was deposited on two silicon wafers, where one of them was thermally annealed in nitrogen to create silver nanoparticles. Subsequently, both samples were annealed in water vapour and afterwards analysed by Scanning Electron Microscope. The images have shown that the annealed silver nanoparticles burrowed into the silicon substrate in the case of both samples. This new method of silicon etching introduces an alternative way of manufacturing nanohole arrays in silicon substrates.\n
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Preparation and characterization of nanomaterials for electrochemical energy storage
Bouša, Milan ; Kavan, Ladislav (advisor) ; Fejfar, Antonín (referee) ; Velický, Matěj (referee)
Graphene research is nowadays one of the worldwide most prominent fields of interest in material science due to many extraordinary properties of graphene and related materials. However, the different techniques of synthesis and subsequent handling and/or treatment have a substantial impact on the properties of the graphene and thus a lot of efforts have been focused on developing of the advanced methods for graphene preparation and characterization. Graphene can be easily produced by oxidation and consequent exfoliation of the bulk graphite; however, resulting graphene oxide needs to be reduced back to graphene-like structure due to partial restoration of sp2 network. Herein, a detailed study of the structural evolution of the graphene oxide during electrochemical treatment has been performed using X-ray photoelectron, Raman and infrared spectroscopies and the results were compared with non-oxidized graphene nano-platelets. Additionally, graphene oxide in composite with LiFePO4 olivine material, which is electrochemically almost inactive in a freshly made state, has been tested by repeated electrochemical cycling. Using various electrochemical methods, the progressive electrochemical activity enhancement has been observed and spontaneous graphene reduction was identified as responsible for this...
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Structure and properties of DLC layers for industrial applications
Mates, Tomáš ; Ledinský, Martin ; Vetushka, Aliaksi ; Pikna, Peter ; Fejfar, Antonín ; Marek, A. ; Vyskočil, J. ; Erichsen, J. ; Dawah, P.
Diamond-like carbon (DLC) layers based on amorphous carbon are used for wide range of applications, mostly for mechanical protection of various industrial components. We examined DLC layers at micro- and nanoscale by two independent microscopic techniques: Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) with a good agreement. We compared DLC layers grown on steel substrate and Si wafer and found similarly structured clusters and a certain difference in the density of nucleation centres. The measurements of local mechanical properties by the AFM tip revealed that the Si wafer behaves as softer material compared to the growing DLC nanoclusters that also exhibit lower values in the map of the relative local friction coefficient. Finally, we observed changes in the Raman spectra of the DLC exposed to annealing at ambient conditions and found a gradual shift from the diamond phase to the graphite phase as a function of increasing temperature.
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Early stages of indium growth on the Si (100) surface
Javorský, Jakub ; Ošťádal, Ivan (advisor) ; Fejfar, Antonín (referee) ; Šikola, Tomáš (referee)
Self-assembled chains composed of group III and IV metals on Si(100) are studied for possible applications in nanodevices using Scanning Tunneling Microscopy. In this thesis we experimentally identify the structure of indium chains and analyze their creation and decay. The chains are found to be single atom wide and grow and decay by attachment/ detachment of single atoms. The chains are found to preferably nucleate on C-type defects (dissociated H20 molecules). Diffusion of the In adatoms is almost isotropic, despote the anisotropic structure of the surface. Low temperature experiments show first- ever observation of a free single group III metal on the Si(100)-2×1 surface.
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