National Repository of Grey Literature 2 records found  Search took 0.01 seconds. 
Silver catalysed nanoscale silicon etching in water vapour
Křížek, Filip ; Pikna, Peter ; Fejfar, Antonín
N+-doped silicon substrates were etched by water vapour under the silver nanoparticles acting as a catalyst. Thin silver layer was deposited on two silicon wafers, where one of them was thermally annealed in nitrogen to create silver nanoparticles. Subsequently, both samples were annealed in water vapour and afterwards analysed by Scanning Electron Microscope. The images have shown that the annealed silver nanoparticles burrowed into the silicon substrate in the case of both samples. This new method of silicon etching introduces an alternative way of manufacturing nanohole arrays in silicon substrates.\n
The deposition of germanium nanoparticles on hydrogenated amorphous silicon
Stuchlík, Jiří ; Volodin, V.A. ; Shklyaev, A.A. ; Stuchlíková, The-Ha ; Ledinský, Martin ; Čermák, Jan ; Kupčík, Jaroslav ; Fajgar, Radek ; Mortet, Vincent ; More Chevalier, Joris ; Ashcheulov, Petr ; Purkrt, Adam ; Remeš, Zdeněk
We reveal the mechanism of Ge nanoparticles (NPs) formation on the surface of the hydrogenated amorphous silicon (a-Si:H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) on ITO and a on boron doped nanocrystalline diamond (BDD). The coating of Ge NPs on a-Si:H was performed by molecular beam epitaxy (MBE) at temperatures up to 450 °C. The Ge NPs were characterized by Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The nanocrystalline Ge particles are conglomerates of nanocrystals of size 10-15 nm and quantum dots (QDs) with size below 2 nm embedded in amorphous Ge phase. After coating with Ge NPs the a-Si:H thin films show better adhesion on BDD substrates then on ITO substrates.

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