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National Repository of Grey Literature 4 records found  Search took 0.01 seconds. 
Srovnávací studie heterostruktur s kvantovými jámami pomocí tranzientní spektroskopie hlubokých hladin
 Kosíková, Jitka ; Žďánský, Karel ; Rudra, A. ; Kapon, E.
Deep level transient spectroscopy (DLTS) and capacitance-voltage measurements have been made on AlGaAs/GaAs diode structures containing quantum wells (QW) prepared with graded and with step aluminium content as well as on structures without QWs.A new DLTS peak has been observed in the structures containing QWs, either with graded or with step structure. Mechanisms of electron transitions explaining the new results has been discussed.
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The camera vizualization system of precision mesuring situation for semiconductor tester
 Kostka, František ; Starý, Robert ; Ronovský, Petr ; Krechler, Jindřich
The CCD camera vizualization system is used for precision position setting of testing needle for topografical I/U measuring characteristic.
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Doba života nosičů náboje a Seebeckův koeficient v polovodičích
 Vacková, S. ; Gorodynskyy, Vladyslav ; Žďánský, Karel ; Vacek, K. ; Kozak, Halina
The lifetime of carriers represents an important parameter of radiation detectors which is characteristic for them. Usually the current experimental technique for their measurement makes use of different experimental methods, as photoconductivity. Very often the product of mobility and lifetime is introduced as a criterion for the semiconductor suitability of radiation detection.
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Příprava dopovaných a kodopovaných monokrystalů fosfidu inditého
 Pekárek, Ladislav ; Žďánský, Karel
Indium phosphide crystals doped with various impurity atoms were grown by liquid encapsulation Czochralski method. The wafers of the grown crystals were characterized by resistivity an Hall measurements and their suitability for radiation detection was assessed.
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