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Analysis of Nanostructures by ToF-LEIS
Duda, Radek ; Král, Jaroslav (referee) ; Mašek, Karel (referee) ; Dub, Petr (advisor)
The presented thesis deals with the utilization of TOF-LEIS analytical method in the area of nanostructure analysis. A new procedure for depth profiling of the elemental composition of the sample, based on the alternate measurement with the DSIMS method, was established. The TOF-LEIS method is able to detect the interface between the layers before its mixing by the ion beam of the DSIMS method. Furthermore, a procedure of TOF-LEIS spektra modification was established to obtain the actual concentration of elements in the sample by reduction of a multiple collision contribution. By comparison of TOF-LEIS spectra with the results received by the DSIMS method the ratio of molybdenum and silicon ion yields was obtained. In the next section advantages of the TOF-LEIS method in combination with XPS during analysis of thermal stability of gold nanoparticles are presented. The mutual complementarity of both methods is shown and final conclusions are supported by electron microscopy images. The final section deals with a newly assembled apparatus for the TOF-SARS analytical method and shows its possibilities regarding the detection of hydrogen on the graphene.
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Fabrication of Nanostructures and Nanodevices for Nanoelectronics and Spintronics
Lišková, Zuzana ; Červenka, Jiří (referee) ; Čech, Vladimír (referee) ; Šikola, Tomáš (advisor)
The thesis deals with preparation of graphene nanostructures and their applications in the measurement of transport properties of graphene. The contacts for measurement of resistance are fabricated by electron beam lithography on graphene exfoliated flakes, CVD graphene layers and grains. Graphene is also shaped using the same method. Resistivity of the layer, concentration and mobility of charge carriers are determined by different approaches. Hysteresis appearing in dependence of resistivity on the gate voltage is discussed as well. A significant part of the work is dedicated to monitoring the response of graphene resistance to relative humidity changes and potential use of graphene as a sensor of relative humidity.
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Graphene photodetector based on plasmonic effects
Horáček, Matěj ; Hájková,, Zdenka (referee) ; Šikola, Tomáš (advisor)
Two rich and vibrant fields of investigation - graphene and plasmonics - strongly overlap in this work, giving rise to a novel hybrid photodetection device. The intrinsic photoresponse of graphene is significantly enhanced by placing the gold nanorods exhibiting unique anisotropic localized surface plasmon resonances on the graphene surface. The reported enhanced photoresponse of graphene is caused by the redistribution of localized surface plasmons in the nanoparticles into graphene. The exact underlying energy redistribution mechanism is thoroughly studied by a single particle scattering spectroscopy monitoring the particle plasmon linewidth as a function of the number of underlaying graphene layers. The obtained extraordinary plasmon broadening for nanoparticles placed on graphene suggests the contribution of a novel energy redistribution channel attributed to the injection of hot electrons from gold nanorods into graphene.
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Application of Graphene Membrane in Nanoelectronic Devices
Kormoš, Lukáš ; Drbohlavová, Jana (referee) ; Bartošík, Miroslav (advisor)
This diploma thesis is focused on the applications and fabrication of graphene membrane from graphene prepared by the chemical vapor deposition. Theoretical part deals with transport properties of the graphene and multiple scattering processes limiting the charge carrier mobility in this material. Included is short review of graphene membrane applications. Experimental part provides fabrication process for achieving suspended graphene device by utilizing electron beam lithography, focused ion beam, chemical etching and patterning of graphene. Graphene membrane is characterized by transport properties measurement and compared to non-suspended graphene.
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The preparation and characterisation of electrical properties of graphene CVD monocrystals
Hulva, Jan ; Rezek, Bohuslav (referee) ; Mach, Jindřich (advisor)
Chemická depozice grafenu z plynné fáze (CVD) je metoda schopná produkovat grafenové monovrstvy velkých velkých rozměrů. Část experimentální práce v rámci této diplomové práce je zaměřena na depozici a analýzu grafenových monokrys- talů připravených metodou CVD na měděném substrátu. Pro analýu grafénových domén je použito technik optické mikroskopie, elektronové mikroskopie, mikroskopie atomárních sil a Ramanovy spektroskopie. Úkolem další části je studium defektů po- zorovaných na mědi po depozici grafenu pomocí energiově disperzní rentgenové spek- troskopie. Množství těchto defektů bylo odstraněno úpravou depozičního systému ačkoliv takto nebylo dosaženo eliminování všech typů defektů. Poslední část této práce se zabývá měření elektro-transportních vlastností grafenu. Výsledky této části zahrnují měření ve vakuu se zapojeným hradlovým napětím a měření při nízkých teplotách v magnetickém poli.
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The deposition of Ga and GaN nanostructures on silicon and graphene substrate
Mareš, Petr ; Hospodková,, Alice (referee) ; Mach, Jindřich (advisor)
Presented thesis is focused on the study of properties of Ga and GaN nanostructures on graphene. In the theoretical part of the thesis a problematics of graphene and GaN fabrication is discussed with a focus on the relation of Ga and GaN to graphene. The experimental part of the thesis deals with the depositions of Ga on transferred CVD-graphene on SiO2. The samples are analyzed by various methods (XPS, AFM, SEM, Raman spectroscopy, EDX). The properties of Ga on graphene are discussed with a focus on the surface enhanced Raman scattering effect. Furthermore, a deposition of Ga on exfoliated graphene and on graphene on a copper foil is described. GaN is fabricated by nitridation of the Ga structures on graphene. This process is illustrated by the XPS measurements of a distinct Ga peak and the graphene valence band during the process of nitridation.
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