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Review of nanocrystalline diamond film deposition on silicon and glass substrates down to 400 °C
Potocký, Štěpán ; Babchenko, Oleg ; Ižák, Tibor ; Varga, Marián ; Kromka, Alexander ; Rezek, Bohuslav ; Michalka, M.
We present an overview of a nanocrystalline diamond (NCD) films deposition on silicon and glass substrates by microwave plasma CVD in hydrogen-based gas mixture. The temperature plays a crucial parameter as the diamond growth process is temperature controlled. Use of temperature sensitive substrates demanded reducing substrate temperature. Natural decrease of deposition rate resulted in search of new or nonstandard process parameters which could at least minimize or compensate it. Addition of oxygen containing gasses was found to improve film quality, and increasing deposition speed. Moreover improvement in pre-treatment of foreign substrates allowed deposition of fully closed films in less then 100 nm. Low thickness of NCD always favorable due to lattice mismatch between substrate material and NCD film. Successful adoption of NCD film deposition on silicon and glass allowed us to study surface chemical modification for protein attachment and DNA immobilization.
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Vliv RF výboje na růst nanokrystalických diamantových vrstev deponovaných metodou pulsní laserové depozice
Novotný, Michal ; Jelínek, Miroslav ; Bulíř, Jiří ; Lančok, Ján ; Vorlíček, Vladimír ; Michalka, M. ; Popov, C.
In this paper, we report on the growth of NCD films by PLD in pure hydrogen ambient and by HPLD in Ar/H.sub.2./sub. ambient. HPLD systems were based on combination of PLD and addiational RF discharges. The deposited films were studied using Alfastep profilometer, X-ray diffraction, Raman spectroscopy and scanning electron microscopy
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