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	Characterization of lasers with ë-InAs layers in GaAs Hazdra, P. ; Voves, J. ; Oswald, Jiří ; Hulicius, Eduard ; Pangrác, Jiří ; Melichar, Karel ; Šimeček, Tomislav ; Petříček, Otto ; Kuldová, Karla The dependence of the electroluminescence spectra on the number of ë-InAs layers and on the distance of these ë-InAs layers was studied under pulse excitation in the wide range of current densities. Detailed record
	Optická reflexe a fotoluminiscence kvantových teček InAs/GaAs Humlíček, J. ; Navrátil, K. ; Lorenc, M. ; Oswald, Jiří ; Pangrác, Jiří ; Hulicius, Eduard Detailed record
	Struktury kvantových teček v systému InAs/GaAs, připravené metodou LP-MOVPE Pangrác, Jiří ; Oswald, Jiří ; Hulicius, Eduard ; Melichar, Karel ; Šimeček, Tomislav Detailed record
	Příprava a charakterizace kvantově-rozměrových struktur připravených z polovodičů A III B V technologií MOVPE Hulicius, Eduard ; Hospodková, Alice ; Pangrác, Jiří ; Melichar, Karel ; Šimeček, Tomislav ; Oswald, Jiří ; Vorlíček, Vladimír ; Kuldová, Karla Detailed record
	Vlastnosti Nd: YAP vlnovodových vrstev vytvářených laserem Jelínek, Miroslav ; Lančok, Ján ; Oswald, Jiří ; Studnička, Václav Detailed record
	Strained In.sub.x./sub.Ga.sub.1-x./sub.As/GaAs multiple quantum wells grown by MOVPE Hospodková, Alice ; Hulicius, Eduard ; Oswald, Jiří ; Pangrác, Jiří ; Melichar, Karel ; Šimeček, Tomislav Detailed record
	Preparation and properties of InAs/GaAs lasers Oswald, Jiří ; Hulicius, Eduard ; Pangrác, Jiří ; Melichar, Karel ; Šimeček, Tomislav ; Petříček, Otto ; Karel, František Detailed record
	Magnetron Sputtering in Microwave and Optical Technology Prajzler, V. ; Schröfel, J. ; Hüttel, I. ; Špirková, J. ; Machovič, V. ; Oswald, J. ; Studnička, V. ; Novotná, M. ; Peřina, Vratislav The paper describes the preparation and properties of gallium nitride layers with erbium content. Detailed record
	Luminiscenční vlastnosti Er:YAG a Er:YAP tenkých vrstev připravených pulsní laserovou ablací Pavelka, Martin ; Jelínek, Miroslav ; Lančok, Ján ; Oswald, Jiří Luminescence properties of Er:YAG and Er:YAP thin films were studied and the possibilities of creation of planar waveguide lasers were investigated Detailed record
	Measurement of electro-optical properties of quantum-size structures based on InAs/GaAs - photocurrent and electroluminescence Mačkal, Adam ; Hazdra, P. ; Hulicius, Eduard ; Oswald, Jiří ; Pangrác, Jiří ; Melichar, Karel ; Hospodková, Alice ; Šimeček, Tomislav Contribution presents the electroluminescence, photoabsorption and polarization properties of semiconductor lasers with thin strained InAs layers in GaAs at elevated temperatures. The lasers exhibit high optical recombination efficiency, low threshold current density and wide temperature operation range (above 100řC). Detailed record

See also: similar author names
1	Oswald, Jaroslav
2	Oswald, Jiří

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