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	On the nature of the traps related with the In.sub.0,5./sub.Ga.sub.0,5./sub.P/GaAs interface Gladkov, Petar ; Nohavica, Dušan ; Paloura, E. Detailed record
	Preparation of the periodic structures by meander type LPE Nohavica, Dušan Detailed record
	Tvorba mikro a nanoporů v polovodičích A.sup.3./sup. B.sup.5./sup Nohavica, Dušan ; Gladkov, Petar ; Zelinka, Jiří ; Dvořák, Martin ; Pirov, J. Electrochemically etched pores are accessible also in A.sup.3./sup. B.sup.5./sup. semiconductors. In particular, pores in InP, GaAs and GaP have been investigated in our laboratory. More complex experimental data have been collected for InP which is suitable for the preparation almost self organized pores net. Pores multilayer containing current oriented and/or crystallographic pores was prepared and some details of the process are discussed. The GaAs and GaP demonstrate both, current oriented and crystallographic pores as well with specific differences. Detailed record
	Příprava a vlastnosti heterostruktur GaInP.sub.2./sub./GaAs Nohavica, Dušan ; Gladkov, Petar ; Žďánský, Karel Growth of the Ga.sub.x./sub.In.sub.1-x./sub.P/GaAs(100) heterostructures from the liquid phase was optimized at 800.sup.o./sup.C to obtain thick epitaxial layers. Experimental conditions for growth of the mirror like, morphological defects free structures are very narrow. Capping of the ternary layer by GaAs grown from the Bi or Bi-Ga melt was investigated as well. New model of the substrate planarity related defects has been suggested. Detailed record

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