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National Repository of Grey Literature 14 records found  previous11 - 14  jump to record: Search took 0.00 seconds. 
Preparation and properties of InAs/GaAs lasers
 Oswald, Jiří ; Hulicius, Eduard ; Pangrác, Jiří ; Melichar, Karel ; Šimeček, Tomislav ; Petříček, Otto ; Karel, František
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Ballistic electron emission microscopy of InAs quantum dots in AlGaAs/GaAs heterostructure
 Vaniš, Jan ; Hulicius, Eduard ; Pangrác, Jiří ; Melichar, Karel ; Walachová, Jarmila
Ballistic electron emission measurements of InAs/GaAs quantum dots in AlGaAs/GaAs heterostructures are presented in our contribution. Measured heterostructure was prepared by MOCVD technique. The area of 1 μm.sup.2./sup. was analyzed during measurements. Different size and shape of quantum dots on an examined area were vizualized. The average size of quantum dots were 10 nm and less. The observed shapes are probably connected with density of states in quantum dots.
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Measurement of electro-optical properties of quantum-size structures based on InAs/GaAs - photocurrent and electroluminescence
 Mačkal, Adam ; Hazdra, P. ; Hulicius, Eduard ; Oswald, Jiří ; Pangrác, Jiří ; Melichar, Karel ; Hospodková, Alice ; Šimeček, Tomislav
Contribution presents the electroluminescence, photoabsorption and polarization properties of semiconductor lasers with thin strained InAs layers in GaAs at elevated temperatures. The lasers exhibit high optical recombination efficiency, low threshold current density and wide temperature operation range (above 100řC).
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Lasery s napjatými tenkými InAs vrstvami v GaAs - elektroluminiscence a fotoabsorpce při zvýšených teplotách
 Mačkal, Adam ; Hazdra, P. ; Hulicius, Eduard ; Pangrác, Jiří ; Melichar, Karel
Electro-optical characterisation of semiconductor lasers with very thin strained InAs layers in GaAs. The lasers exhibit high optical recombination efficiency, low threshold current and capability to operate at elevated temperatures
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National Repository of Grey Literature : 14 records found   previous11 - 14  jump to record:
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