Institute of Physics

Institute of Physics 587 records found  beginprevious585 - 587  jump to record: Search took 0.00 seconds. 
Lasery s napjatými tenkými InAs vrstvami v GaAs - elektroluminiscence a fotoabsorpce při zvýšených teplotách
Mačkal, Adam ; Hazdra, P. ; Hulicius, Eduard ; Pangrác, Jiří ; Melichar, Karel
Electro-optical characterisation of semiconductor lasers with very thin strained InAs layers in GaAs. The lasers exhibit high optical recombination efficiency, low threshold current and capability to operate at elevated temperatures
Kvantově rozměrné struktury pro fotoniku a elektroniku, připravené pomocí MOVPE
Mačkal, Adam
Study of structural and electro-optical properties of the MOVPE grown lasers with .delta.-InAs multilayers
Lasery s tenkými InAs vrstvami v GaAs - absorpce a elektroluminiscence
Mačkal, Adam
Contribution presents the electroluminescence, photoabsorption and polarization properties of semiconductor lasers with thin strained InAs layers in GaAs at elevated temperature (above 25.sup.o./sup.C). The lasers exhibit high optical recombination efficiency, low threshold current density and wide temperature operation range

Institute of Physics : 587 records found   beginprevious585 - 587  jump to record:
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