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Graphene photodetector based on plasmonic effects
Horáček, Matěj ; Hájková,, Zdenka (referee) ; Šikola, Tomáš (advisor)
Two rich and vibrant fields of investigation - graphene and plasmonics - strongly overlap in this work, giving rise to a novel hybrid photodetection device. The intrinsic photoresponse of graphene is significantly enhanced by placing the gold nanorods exhibiting unique anisotropic localized surface plasmon resonances on the graphene surface. The reported enhanced photoresponse of graphene is caused by the redistribution of localized surface plasmons in the nanoparticles into graphene. The exact underlying energy redistribution mechanism is thoroughly studied by a single particle scattering spectroscopy monitoring the particle plasmon linewidth as a function of the number of underlaying graphene layers. The obtained extraordinary plasmon broadening for nanoparticles placed on graphene suggests the contribution of a novel energy redistribution channel attributed to the injection of hot electrons from gold nanorods into graphene.
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Application of Graphene Membrane in Nanoelectronic Devices
Kormoš, Lukáš ; Drbohlavová, Jana (referee) ; Bartošík, Miroslav (advisor)
This diploma thesis is focused on the applications and fabrication of graphene membrane from graphene prepared by the chemical vapor deposition. Theoretical part deals with transport properties of the graphene and multiple scattering processes limiting the charge carrier mobility in this material. Included is short review of graphene membrane applications. Experimental part provides fabrication process for achieving suspended graphene device by utilizing electron beam lithography, focused ion beam, chemical etching and patterning of graphene. Graphene membrane is characterized by transport properties measurement and compared to non-suspended graphene.
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The preparation and characterisation of electrical properties of graphene CVD monocrystals
Hulva, Jan ; Rezek, Bohuslav (referee) ; Mach, Jindřich (advisor)
Chemická depozice grafenu z plynné fáze (CVD) je metoda schopná produkovat grafenové monovrstvy velkých velkých rozměrů. Část experimentální práce v rámci této diplomové práce je zaměřena na depozici a analýzu grafenových monokrys- talů připravených metodou CVD na měděném substrátu. Pro analýu grafénových domén je použito technik optické mikroskopie, elektronové mikroskopie, mikroskopie atomárních sil a Ramanovy spektroskopie. Úkolem další části je studium defektů po- zorovaných na mědi po depozici grafenu pomocí energiově disperzní rentgenové spek- troskopie. Množství těchto defektů bylo odstraněno úpravou depozičního systému ačkoliv takto nebylo dosaženo eliminování všech typů defektů. Poslední část této práce se zabývá měření elektro-transportních vlastností grafenu. Výsledky této části zahrnují měření ve vakuu se zapojeným hradlovým napětím a měření při nízkých teplotách v magnetickém poli.
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The deposition of Ga and GaN nanostructures on silicon and graphene substrate
Mareš, Petr ; Hospodková,, Alice (referee) ; Mach, Jindřich (advisor)
Presented thesis is focused on the study of properties of Ga and GaN nanostructures on graphene. In the theoretical part of the thesis a problematics of graphene and GaN fabrication is discussed with a focus on the relation of Ga and GaN to graphene. The experimental part of the thesis deals with the depositions of Ga on transferred CVD-graphene on SiO2. The samples are analyzed by various methods (XPS, AFM, SEM, Raman spectroscopy, EDX). The properties of Ga on graphene are discussed with a focus on the surface enhanced Raman scattering effect. Furthermore, a deposition of Ga on exfoliated graphene and on graphene on a copper foil is described. GaN is fabricated by nitridation of the Ga structures on graphene. This process is illustrated by the XPS measurements of a distinct Ga peak and the graphene valence band during the process of nitridation.
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Deposition of Ga and GaN ultrathin layers on graphene substrate
Dvořák, Martin ; Nebojsa, Alois (referee) ; Mach, Jindřich (advisor)
This diploma thesis deals with preparation of graphene samples for depositions of ultrathin layers of gallium and gallium nitride. Graphene substrates were prepared by chemical vapour deposition in home-build high temperature reactor. After graphene transfer to silicon wafers, a series of chemical and thermal treatments were performed. Obtained samples were suitable for the study of growth of ultrathin layers of Ga and GaN. The growth of Ga and GaN was realized in ultra high vacuum conditions. Molecular beam epitaxy technique was used for gallium depositions together with ion source for nitridation. Obtained ultrathin layers were studied with X-ray photoelectron spectroscopy, atomic force microscopy and with scanning electron microscopy.
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Application of KPM on Graphene/Si Surface Modified by FIB method
Konečný, Martin ; Rezek, Bohuslav (referee) ; Bartošík, Miroslav (advisor)
This diploma thesis is focused on the application of Kelvin probe microscopy on graphene fabricated by the chemical vapour deposition. The theoretical part of the thesis deals with basic principles of Kelvin force microscopy and focus ion beam. Further, basic properties of graphene and its possible fabrication methods are discussed. The experimental part is focused on the surface potential measurements on graphene membranes fabricated on the substrate modified by focus ion beam. Finally, atomic force microscope lithography was used for nanopatterning of graphene sheets.
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Modeling of Surface-Plasmon Propagation in Graphene
Hrtoň, Martin ; Munzar,, Dominik (referee) ; Kalousek, Radek (advisor)
The diploma thesis provides an introduction to electronic and optical properties of graphene, emphasizing thier tunability through the ambipolar field effect. Furthermore, an experiment, which would demonstrate the possible utilization of graphene in active plasmonics, is presented. The author focuses on light scattering simulations involving hybrid plasmonic structures made of noble metals and graphene. The scattering properties of those structures and their dependence on the density of free charge carriers in graphene are investigated. The author concludes that the proposed tuning of the response of a single metallic antenna through the electrostatic doping of graphene proves to be inefficient, and a more elaborate configuration will be required to enhance the effect and achieve the desired control.
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