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STRAIN ENGINEERING OF THE ELECTRONIC STRUCTURE OF 2D MATERIALS
del Corro, Elena ; Peňa-Alvarez, M. ; Morales-García, A. ; Bouša, Milan ; Řáhová, Jaroslava ; Kavan, Ladislav ; Kalbáč, Martin ; Frank, Otakar
The research on graphene has attracted much attention since its first successful preparation in 2004. It possesses many unique properties, such as an extreme stiffness and strength, high electron mobility, ballistic transport even at room temperature, superior thermal conductivity and many others. The affection for graphene was followed swiftly by a keen interest in other two dimensional materials like transition metal dichalcogenides. As has been predicted and in part proven experimentally, the electronic properties of these materials can be modified by various means. The most common ones include covalent or non-covalent chemistry, electrochemical, gate or atomic doping, or quantum confinement. None of these methods has proven universal enough in terms of the devices' characteristics or scalability. However, another approach is known mechanical strain/stress, but experiments in that direction are scarce, in spite of their high promises.\nThe primary challenge consists in the understanding of the mechanical properties of 2D materials and in the ability to quantify the lattice deformation. Several techniques can be then used to apply strain to the specimens and thus to induce changes in their electronic structure. We will review their basic concepts and some of the examples so far documented experimentally and/or theoretically.
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Ab-initio calculation of structures´ stability of Ni-N compounds
Šárfy, Pavlína ; Vřešťál,, Jan (referee) ; Šob,, Mojmír (advisor)
The present thesis is devoted to ab initio study of electronic structure of nickel nitrides NiN, Ni2N, Ni3N and Ni4N. The results are used to predict the most stable structures for each composition. The total energies and the electronic structures are calculated by means of the pseudopotential method implemented in the Abinit code and by full-potential linearized augmented plane wave (FLAPW) method incorporated in the Wien2K code. For the exchange-correlation energy, both the local density approximation (LDA) and generalized approximation (GGA) are employed. We predicted the face centered cubic structure B3 as the most stable modification of NiN, the primitive tetragonal structure C4 as the most stable modification of Ni2N, the hexagonal structure as the most stable modification of Ni3N (in agreement with experimental data) and the primitive cubic structure as the most stable modification of Ni4N.
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Stability of iron, cobalt and nickel carbides and nitrides from first principles
Svatoň, Josef ; Vřešťál, Jan (referee) ; Šob, Mojmír (advisor)
The present hesis is devoted to crystal structure stability of cobalt and nickel carbides and nitrides and exactly structures NiC and CoN. In this case we understand this structure as lowest energetic status which the crystals are in. Using computational program ABINIT we get numerical solutions of electronic structers to predicate staility of chosen structures. All structures are compared with experimental observation. The total energies and the electronic structures are calculated by means of pseudopotencial method implemented in ABINIT. As a solution of my observation consider I the structures of the zincblende for both solids NiC and CoN, thus face centered cubic structure.
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Qantum-mechanical study of structural stability of Ni4N allotropes
Hemzalová, P. ; Friák, Martin ; Šob, Mojmír ; Neugebauer, J.
Parameter-free density functional theory (DFT) calculations of Ni4N in eight crystallographic phases were performed using the pseudopotential approach implemented in the VASP code; the exchange-correlation energy was evaluated within the generalized gradient approximation (GGA). In agreement with experiments, the cubic structure with Pearson symbol cP5, space group Pm-3m (221), has been found to be the most stable. It is also the only thermodynamically stable structure at T=0 K with respect to decomposition into elemental Ni crystal and N2 gas phase. We determine structural, thermodynamic, electronic, magnetic and elastic properties of all eight Ni4N allotropes studied. The thermodynamic stability and bulk modulus is found to be anti-correlated. For the cubic allotropes, we predict a complete set of single-crystalline elastic constants, directional dependence of the single-crystalline Young modulus and homogenized polycrystalline elastic moduli.
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Investigating ground state of nickel nitrides NiN and Ni2N with the help of quantum-mechanical calculations
Elstnerová, P. ; Friák, Martin ; Šob, Mojmír ; Neugebauer, J.
We have employed quantum mechanical calculations to identify ground-state structures of nickel nitrides NiN and Ni2N for which experimental data are lacking. In total 19 crystalline phases have been calculated for which not only thermodynamic but also structural and selected elastic properties have been determined. Employing density functional theory (DFT) methods, the total energies were calculated by means of a pseudopotential approach implemented in the VASP code and selected states were benchmarked by the full-potential linearized augmented plane wave (FP-LAPW) method implemented in the WIEN2k code. For the exchange-correlation energy the generalized gradient approximation (GGA) has been used.
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Elektronová struktura slitin india a cínu
Všianská, Monika ; Legut, Dominik ; Šob, Mojmír
The In-Sn system is interesting due to the existence of the simple hexagonal (sh) structure for compositions from 75 to 87 at% Sn at 25 ºC and from 73 to 85 at% Sn at -150 ºC. These alloys are usually referred to as gamma-Sn. Here we study the electronic structure and total energy of gamma-Sn with the help of virtual crystal approximation and demonstrate that sh structure has the lowest energy in the interval of existence of gamma-tin.
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Electronic structure In-Sn alloys
Všianská, Monika ; Legut, Dominik ; Šob, Mojmír
The InSn system is interesting by the existence of a simple hexagonal phase for compositions from 72 to 87 at% Sn at 25 °C and from 73 to 85 at% Sn at -150 °C. These alloys are usually referred to as gamma–Sn. The InSn alloys are disordered in the whole concentration interval. In this contribution, energetics and electronic structure of InSn system is studied from first principles. A simplified version of virtual crystal approximation is employed to describe disorder. It turns out that the present approach is capable of describing phase composition of InSn system in the whole concentration interval. In particular, we are able to reproduce the existence of simple hexagonal phase around 80 at% Sn.
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