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SaaS in Web Design
Míka, Filip ; Gála, Libor (advisor) ; Kafka, Daniel (referee)
This thesis is aimed to evaluate if the current SaaS market is able to meet functional re-quirements of web design in order to appropriately support web design's activities. The theoretical part introduces the web design model which describes web design's functional requirements. The next section presents a research concept that describes model assessment (i.e. solutions delivered as SaaS that support web design) and evaluation process. The results show that the current SaaS market is able to meet the requirements of web design in areas where SaaS solutions are able to provide an essential added value to customers in comparison to on-premise software.
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What is the buzz about the TZ mode
Kolařík, Vladimír ; Matějka, František ; Matějka, Milan ; Horáček, Miroslav ; Urbánek, Michal ; Bok, Jan ; Krátký, Stanislav ; Král, Stanislav ; Mika, Filip
This contribution deals with an e-beam pattern generator BS 600 that works with a variable rectangular spot of electrons (stamp). The TZ stands for the ‘technology zoom’; its meaning is a reduction of the spot size by a factor of 3. Original description of the TZ exposure mode can be found in (1), [2] and [3]; further aspects concerning the exposure system and its electron source were described in [4] and [5]; technology and related topics are discussed in [6], [7], [8] and [9]; overview of application areas is in [10], [11] and [12]; and finally, very recent results are summarized in [13], [14] and [15].
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Surface crystallinity at the sight of electrons
Frank, Luděk ; Mikmeková, Šárka ; Mika, Filip ; Müllerová, Ilona
Scattering of electrons, injected into solids in order to produce an electron optical image of their surfaces, is governed by inner potentional of the sample with its spatial distribution inherent to the target structure. Except truly amorphous materials of the spatial arrangement range shorter than the interaction volume of electrons, we meet anisotropic scattering with the resulting image signal responding to the local crystalline structure. Incident electrons undergo scattering events the number of wich depends on their energy and on the scattering cross section of the material and the final emitted current results from statistics of these events.
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Realtionship between protein content, bread-making quality and wheat endosperm microstructure
Burešová, I. ; Dvořáková, P. ; Hřivna, L. ; Mika, Filip
Microstructure is an organization of structural elements and enables to understand the connections between microstructure – physical properties – food quality. The main composite of the wheat endosperm is starch and the dried endosperm consists of cells filled by the protein and starch grains. The aim of work was to define the relationship between wheat endosperm microstructure, protein content and bread-making quality. Winter wheat cultivars (Triticum aestivum L.) of different bread-making quality were divided into 6 groups in agreement with the visual evaluation of the microstructure. Criteria were coherence, thickness of the protein matrix and immersion of the starch grains into protein matrix. Significantly lower protein content and inferior bread-making was found for endosperm in which the starch grains were not visually recognized, protein matrix was discontinuous, thick and 2D. Conversely the higher protein content and better bread-making quality could be associated with thin protein matrix.
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Imaging of dopants under presence of surface ad-layers
Mika, Filip ; Hovorka, Miloš ; Frank, Luděk
Scanning electron microscopy is widely used for imaging of semiconductor structures. Image contrast between differently doped areas is observable in the secondary electron emission. Quantitative relation exists between the image contrast and the dopant concentration. However, further examination has shown the dopant contrast level of low reproducibility and dependent on additional factors like the primary electron dose, varying energy and angular distributions of the SE emission and also presence of ad-layers on the semiconductor surface.
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