Original title: Mapping of dopants in silicon by injection of electrons
Authors: Hovorka, Miloš ; Konvalina, Ivo ; Frank, Luděk
Document type: Papers
Conference/Event: Mikroskopie 2011, Nové Město na Moravě (CZ), 2011-02-17 / 2011-02-18
Year: 2011
Language: eng
Abstract: We have focused on planar p-type structures of various dopant densities, embedded In an n-type substrate. The samples were observed in UHV electron microscope with the cathode lens. Imaging by means of secondary electrons and its quantifiability was verified and the method was extended to very low energies.
Keywords: mapping dopants; semiconductors
Project no.: CEZ:AV0Z20650511 (CEP)
Host item entry: Mikroskopie 2011, ISBN N

Institution: Institute of Scientific Instruments AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0006670

Permalink: http://www.nusl.cz/ntk/nusl-71591


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Research > Institutes ASCR > Institute of Scientific Instruments
Conference materials > Papers