Original title: Characterization Of Aln Nanolayers Deposited On A Surface Of Hopg By Pe-Ald
Authors: Dallaev, Rashid
Document type: Papers
Language: eng
Publisher: Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií
Abstract: In this study plasma-enhanced atomic layer deposition process of AlN has been performedwith the purpose to test the expediency of highly oriented pyrolytic graphite (HOPG) to serve as asubstrate in such process. The obtained samples were thoroughly analyzed using various analyticaltechniques. Atomic force microscopy was employed for studying topographic and morphologicalfeatures of the surface; x-ray photoelectron spectroscopy (XPS) analysis supported by second ionmassspectrometry method (SIMS) has been conducted on the obtained sample to investigate thechemical nature of the deposited films as well as elemental distribution. Temperature stability ofHOPG makes it a suitable substrate for preparation of AlN films, being a bottom contact for furthertesting of the films electrical properties. The data gathered from the aforementioned techniques haveindicated that HOPG is a viable choice for AlN ALD process.
Keywords: aluminium nitride; atomic force microscopy; atomic layer deposition; highly oriented pyrolytic graphite; second ion-mass spectrometry; x-rayphotoelectron spectroscopy
Host item entry: Proceedings II of the 27st Conference STUDENT EEICT 2021: Selected papers, ISBN 978-80-214-5943-4

Institution: Brno University of Technology (web)
Document availability information: Fulltext is available in the Brno University of Technology Digital Library.
Original record: http://hdl.handle.net/11012/200839

Permalink: http://www.nusl.cz/ntk/nusl-447883


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