Original title: Estimating The Power Bjt Excess Charge Recombination Time Constant
Authors: Mikláš, Ján
Document type: Papers
Language: eng
Publisher: Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií
Abstract: The paper demonstrates an experimental way of estimating the excess minority carriers charge stored within the the power bipolar transistor in the saturation mode, i.e. with both junctions forward-biased, as a reference to future IGBT switching action analysis. The method is based on analyzing the transient turn-off base current waveforms at different conditions right before this event. The base current is known to supply the minority carriers within the device. Estimating the recombination time constant serves as a basal precondition for further identification of the excess charge storage depending on various operating conditions and retrospectively an accurate identification of power BJT and IGBT various partial stage of switching action.
Keywords: excess charge storage; IGBT; power BJT; saturation; switching process measurement
Host item entry: Proceedings I of the 26st Conference STUDENT EEICT 2020: General papers, ISBN 978-80-214-5867-3

Institution: Brno University of Technology (web)
Document availability information: Fulltext is available in the Brno University of Technology Digital Library.
Original record: http://hdl.handle.net/11012/200609

Permalink: http://www.nusl.cz/ntk/nusl-447661


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