Original title: Characterization Of Aln Thin Films Deposited On Thermally Processed Silicon Substrates Using Pe-Ald
Authors: Dallaev, Rashid
Document type: Papers
Language: eng
Publisher: Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií
Abstract: The aim of this work is to study topography and chemical composition of AlN thin films deposited on Si substrates previously exposed to various time of thermal processing using plasma-enhanced atomic layer deposition technique. The samples were heated up to 500 °C for the period of 2 and 4 hours. Chemical composition of wafers and the films obtained are provided by Xray photoelectron spectroscopy (XPS). Surface topography was investigated using atomic force microscopy (AFM).
Keywords: aluminum nitride; atomic force microscopy; atomic layer deposition; Si single crystal wafers; topography; x-ray photoelectron spectroscopy
Host item entry: Proceedings of the 25st Conference STUDENT EEICT 2019, ISBN 978-80-214-5735-5

Institution: Brno University of Technology (web)
Document availability information: Fulltext is available in the Brno University of Technology Digital Library.
Original record: http://hdl.handle.net/11012/186763

Permalink: http://www.nusl.cz/ntk/nusl-414665


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